PD-96356 IRG7IA19UPbF Features Key Parameters V min 360 V CE Advanced Trench IGBT Technology V typ. I = 30A 1.49 V Optimized for Sustain and Energy Recovery CE(ON) C circuits in PDP applications I max T = 25C 170 A RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for improved panel efficiency High repetitive peak current capability Lead Free package C G E n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Max. Parameter Units V 30 Gate-to-Emitter Voltage V GE I T = 25C Continuous Collector Current, V 15V 30 C C GE I T = 100C Continuous Collector, V 15V 15 A C C GE I 15 Nominal Current NOMINAL I T = 25C Repetitive Peak Current 170 RP C P T = 25C 35 Power Dissipation W D C P T = 100C Power Dissipation 14 D C 0.27 Linear Derating Factor W/C T Operating Junction and -40 to + 150 J T Storage Temperature Range C STG 300 Soldering Temperature for 10 seconds Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.6 JC R Case-to-Sink, flat, greased surface 0.50 CS C/W R Junction-to-Ambient, typical socket mount 65 JA Wt Weight 2.0 g www.irf.com 1 02/22/11 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Collector-to-Emitter Breakdown Voltage 360 V GE CE CES Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 0.34 V/C CE CES J V = 15V, I = 15A 1.26 1.52 GE CE V = 15V, I = 25A 1.41 GE CE V = 15V, I = 30A 1.49 GE CE V V = 15V, I = 40A Static Collector-to-Emitter Voltage 1.65 V CE(on) GE CE V = 15V, I = 70A 2.12 GE CE V = 15V, I = 120A 2.93 GE CE V = 15V, I = 25A, T = 150C 1.51 GE CE J V Gate Threshold Voltage 2.2 4.7 V GE(th) V = V , I = 1.0mA CE GE CE V / T Gate Threshold Voltage Coefficient -10 mV/C GE(th) J V = 360V, V = 0V I Collector-to-Emitter Leakage Current 1.0 20 CE GE CES V = 360V, V = 0V, T = 125C 35 200 A CE GE J = 360V, V = 0V, T = 150C V 130 CE GE J V = 30V I Gate-to-Emitter Forward Leakage 100 nA GE GES V = -30V Gate-to-Emitter Reverse Leakage -100 GE V = 25V, I = 25A g Forward Transconductance 62 S CE CE fe Q V = 200V, I = 25A, V = 15V Total Gate Charge 38 g CE C GE nC Q Gate-to-Collector Charge 12 gc t I = 25A, V = 196V Turn-On delay time 15 d(on) C CC t Rise time 21 ns R = 10 , L = 200H, L = 150nH r G S t T = 25C Turn-Off delay time 68 d(off) J t Fall time 88 f t Turn-On delay time 15 I = 25A, V = 196V d(on) C CC t Rise time 23 ns R = 10 , L = 200H, L = 150nH r G S t T = 150C Turn-Off delay time 84 d(off) J t Fall time 191 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.40F, V = 15V GE 854 E Energy per Pulse J V = 240V, R = 5.1, T = 25C PULSE CC G J L = 220nH, C= 0.40F, V = 15V GE 1083 V = 240V, R = 5.1, T = 100C CC G J Class 1C Human Body Model (Per JEDEC standard JESD22-A114) ESD Class B Machine Model (Per EIA/JEDEC standard EIA/JESD22-A115) C V = 0V Input Capacitance 1100 ies GE V = 30V C Output Capacitance 57 pF oes CE C = 1.0MHz Reverse Transfer Capacitance 30 res L Internal Collector Inductance Between lead, C 4.5 nH 6mm (0.25in.) L Internal Emitter Inductance from package E 7.5 and center of die contact Half sine wave with duty cycle <= 0.05, ton=2sec. R is measured at T of approximately 90C. q J Pulse width 400s duty cycle 2%. 2 www.irf.com