IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 650V CES C C I = 15A, T =100C C C t 5.5s, T = 175C SC J(max) E C V typ. = 1.7V IC = 8A CE(ON) E G C G G E IRGS4715DPbF Applications IRGB4715DPbF 2 n-channel D Pak TO220AB Industrial Motor Drive UPS G C E Solar Inverters Gate Collector Emitter Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGB4715DPbF TO-220 Tube 50 IRGB4715DPbF Tube 50 IRGS4715DPbF 2 IRGS4715DPbF D -Pak Tape and Reel Left 800 IRGS4715DTRLPbF Tape and Reel Right 800 IRGS4715DTRRPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 21 C C I T = 100C Continuous Collector Current 15 C C I Pulse Collector Current, V = 15V 24 CM GE I Clamped Inductive Load Current, V = 20V 32 A LM GE I T = 25C Diode Continuous Forward Current 21 F C I T = 100C Diode Continuous Forward Current 13 F C I Diode Maximum Forward Current 32 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 100 D C W P T = 100C Maximum Power Dissipation 50 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 1.5 JC Thermal Resistance Junction-to-Case-(each Diode) 3.6 R (Diode) JC Thermal Resistance, Case-to-Sink (flat, greased surface) 0.5 C/W R CS Thermal Resistance, Junction-to-Ambient (TO-220) 62 R JA 2 Thermal Resistance, Junction-to-Ambient (D -Pak) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGB4715DPBF/IRGS4715DPBF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.8 V/C V = 0V, I = 1mA (25C-175C) V /T GE C (BR)CES J 1.7 2.0 V I = 8A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 8A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.4 V V = V , I = 250A GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -19 mV/C V = V , I = 250A (25C-175C) CE GE C GE(th) J gfe Forward Transconductance 5.7 S V = 50V, I = 8A, PW = 20s CE C 1.0 25 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE 1.8 2.8 V I = 8A F V Diode Forward Voltage Drop F 1.3 I = 8A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 20 30 I = 8A g C Gate-to-Emitter Charge (turn-on) 6 9 V = 15V Q nC ge GE Q Gate-to-Collector Charge (turn-on) 8 12 V = 400V CC gc E Turn-On Switching Loss 200 310 on E Turn-Off Switching Loss 90 180 J off I = 8A, V = 400V, V =15V C CC GE E Total Switching Loss 290 490 total R = 50 , T = 25C G J t Turn-On delay time 30 50 d(on) Energy losses include tail & diode t Rise time 20 30 r reverse recovery ns t Turn-Off delay time 100 120 d(off) t Fall time 20 30 f E Turn-On Switching Loss 340 on E Turn-Off Switching Loss 170 J off I = 8A, V = 400V, V =15V C CC GE E Total Switching Loss 510 total R = 50 , T = 175C G J t Turn-On delay time 30 d(on) Energy losses include tail & diode t Rise time 20 r reverse recovery ns t Turn-Off delay time 120 d(off) t Fall time 70 f C Input Capacitance 540 V = 0V ies GE C Output Capacitance 50 pF V = 30V oes CC C Reverse Transfer Capacitance 15 f = 1.0Mhz res T = 175C, I = 32A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 520V, Vp 650V CC V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 130 J J V = 400V, I = 8A t Diode Reverse Recovery Time 86 ns CC F rr I Peak Reverse Recovery Current 8 A V = 15V, Rg = 50 rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2013 International Rectifier Submit Datasheet Feedback November 12, 2014