About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGB4056DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 1.6391

Multiples of: 1

Single600 V1.85 V+/- 20 V24 A100 nA140 W TO - 220 - 3TubeSiThrough Hole140 W- 55 C+ 175 C 
IGP30N60H3XKSA1


IGBT Transistors INDUSTRY 14
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USD 1.6424

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IGB03N120H2


IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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USD 1.6561

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Single1200 V 20 V    TO - 263 - 3Cut TapeSiSmd/Smt - 40 C+ 150 CIgb03n120
IGW20N60H3FKSA1


Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247
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USD 1.6575

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IRG4BC10KDPBF


Transistor: IGBT; 600V; 9A; 38W; TO220AB
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USD 1.6625

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Single600 V2.62 V+/- 20 V9 A 38 W TO - 220 - 3TubeSiThrough Hole38 W- 55 C  
SGW10N60A


IGBT Transistors FAST IGBT NPT TECH 600V 10A
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Infineon Availability : 0
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USD 1.6838

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Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CSgw10n60
IRG4BC30KD-SPBF


IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
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USD 1.6934

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Single600 V2.7 V+/- 20 V28 A100 nA100 W D2PAKTubeSiSmd/Smt100 W- 55 C+ 150 C 
IHW20N120R3FKSA1


Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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USD 1.6947

Multiples of: 193

Single1200 V1.48 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole310 W- 40 C+ 175 CXhw20n120
IHP10T120


Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-220
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USD 1.6967

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Single               
IRGB5B120KDPBF


IGBT Transistors 1200V UltraFast 10-30kHz
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Infineon Availability : 0
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USD 1.7036

Multiples of: 1

Single1.2 kV2 V+/- 20 V12 A 89 W TO - 220 - 3Tube Through Hole - 55 C  
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