IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features V = 1200V CES Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. I = 6.0A, T =100C C C 10s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. t > 10s, T =150C sc J Positive VCE (on) Temperature Coefficient. E TO-220 Package. V typ. = 2.75V Lead-Free CE(on) n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 12 C C I T = 100C Continuous Collector Current 6.0 C C I Pulsed Collector Current 24 CM I Clamped Inductive Load Current 24 A LM I T = 25C Diode Continuous Forward Current 12 F C I T = 100C Diode Continuous Forward Current 6.0 F C I Diode Maximum Forward Current 24 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 89 D C P T = 100C Maximum Power Dissipation 36 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 1.4 JC R Junction-to-Case - Diode 2.8 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 62 JA Wt Weight 2 (0.07) g (oz) www.irf.com 1 8/2/04IRGB5B120KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.15 V/C V = 0V, I = 1.0mA, (25C-125C) (BR)CES J GE C 5, 6,7 V Collector-to-Emitter Saturation Voltage 2.75 3.0 I = 6.0A V = 15V CE(on) C GE 9,10,11 3.36 3.7 V I = 6.0A V = 15V T = 125C C GE J 9,10,11 V Gate Threshold Voltage 4.0 5.0 6.0 V V = V , I = 250A GE(th) CE GE C 12 V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 1.0mA, (25C-125C) GE(th) J CE GE C g Forward Transconductance 2.6 S V = 50V, I = 6.0A, PW=80s fe CE C I Zero Gate Voltage Collector Current 100 A V = 0V, V = 1200V CES GE CE 66 200 V = 0V, V = 1200V, T = 125C GE CE J V Diode Forward Voltage Drop 2.13 2.45 I = 6.0A FM F 8 2.38 2.75 V I = 6.0A T = 125C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 25 38 I = 6.0A 23 C Qge Gate - Emitter Charge (turn-on) 3.7 5.6 nC V = 800V CT1 CC Qgc Gate - Collector Charge (turn-on) 13 20 V = 15V GE CT4 E Turn-On Switching Loss 390 440 J I = 6.0A, V = 600V on C CC E Turn-Off Switching Loss 330 440 V = 15V,R = 50, L =3.7mH off GE G E Total Switching Loss 720 880 Ls = 150nH T = 25C tot J CT4 t Turn-On Delay Time 22 29 I = 6.0A, V = 600V d(on) C CC t Rise Time 19 27 V = 15V, R = 50 L =3.7mH r GE G t Turn-Off Delay Time 100 120 ns Ls = 150nH, T = 25C d(off) J t Fall Time 19 25 f CT4 E Turn-On Switching Loss 440 660 I = 6.0A, V = 600V on C CC 13,15 E Turn-Off Switching Loss 370 560 J V = 15V,R = 50, L =3.7mH off GE G WF1WF2 E Total Switching Loss 810 1220 Ls = 150nH T = 125C tot J 14, 16 t Turn-On Delay Time 21 27 I = 6.0A, V = 600V d(on) C CC t Rise Time 18 25 V = 15V, R = 50 L =3.7mH CT4 r GE G t Turn-Off Delay Time 110 150 ns Ls = 150nH, T = 125C WF1 d(off) J t Fall Time 22 29 WF2 f C Input Capacitance 370 V = 0V ies GE 22 C Output Capacitance 33 pF V = 30V oes CC C Reverse Transfer Capacitance 11 f = 1.0MHz res 4 T = 150C, I = 24A, Vp =1200V J C RBSOA Reverse Bias Safe Operting Area FULL SQUARE R =50 CT2 V = 1000V, V = +15V to 0V, G CC GE CT3 s T = 150C, Vp =1200V, R = 50 J G SCSOA Short Circuit Safe Operting Area 10 WF4 V = 900V, V = +15V to 0V CC GE 17,18,19 Erec Reverse Recovery energy of the diode 360 J T = 125C J 20, 21 t Diode Reverse Recovery time 160 ns V = 600V, I = 6.0A, L = 2.0mH rr CC F CT4,WF3 I Diode Peak Reverse Recovery Current 9.0 A V = 15V,R = 50, Ls = 150nH rr GE G Note: V = 80% (V ), V = 15V, L = 100H, R = 50. CC CES GE G Energy losses includetai and diode reverse recovery. 2 www.irf.com