IHP10T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10s Designed for : - Soft Switching Applications G - Induction Heating E TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive PG-TO-220-3-1 temperature coefficient in V CE(sat) - Very low V ce(sat) Very soft, fast recovery anti-parallel EmCon HE diode Low EMI 1 Qualified according to JEDEC for target applications Application specific optimisation of inverse diode Pb-free lead plating RoHS compliant Type V I V T Marking Package CE C CE(sat),Tj=25C j,max IHP10T120 1200V 10A 1.7V H10T120 PG-TO-220-3-1 150C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 V CE DC collector current I A C T = 25C 16 C 10 T = 100C C Pulsed collector current, t limited by T I 24 p jmax Cpuls Turn off safe operating area - 24 V 1200V, T 150C CE j Diode forward current I F 11 T = 25C C 7 T = 100C C Diode pulsed current, t limited by T , T = 25C I 16.5 p jmax c Fpuls Diode surge non repetitive current, t limited by T I A p jmax FSM 28 T = 25C, t = 10ms, sine halfwave C p 50 T = 25C, t 2.5s, sine halfwave C p 40 T = 100C, t 2.5s, sine halfwave C p Gate-emitter voltage V 20 V GE 2) Short circuit withstand time t 10 s SC V = 15V, V 1200V, T 150C GE CC j Power dissipation, T = 25C P 138 W tot C Operating junction temperature T -40...+150 C j Storage temperature T -55...+150 stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 1 Rev. 2.4 Sept. 07 Power Semiconductors IHP10T120 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.9 K/W thJC junction case Diode thermal resistance, R 2.6 thJCD junction case IGBT thermal resistance, R 62 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.5mA 1200 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =10A CE(sat) GE C - 1.7 2.2 T =25C j - 2.0 - T =125C j - 2.2 - T =150C j Diode forward voltage V V =0V, I =4A F GE F T =25C - 1.65 2.15 j - 1.7 - T =150C j Gate-emitter threshold voltage V I =0.6mA,V =V 5.0 5.8 6.5 GE(th) C CE GE Zero gate voltage collector current I V =1200V, mA CES CE V =0V GE T =25C j - - 0.2 T =150C j - - 2.0 Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =10A - 10 - S fs CE C Integrated gate resistor R none Gint 2 Rev. 2.4 Sept. 07 Power Semiconductors