IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V Trench IGBT Technology C CE (ON) V = 600V CES Low switching losses Maximum Junction temperature 175 C I = 12A, T = 100C C C 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of the parts tested for 4X rated current (I ) LM Positive V Temperature co-efficient CE (ON) E V typ. = 1.55V CE(on) Ultra fast soft Recovery Co-Pak Diode n-channel Tight parameter distribution Lead Free Package Benefits C High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V and Low Switching losses CE (ON) E C Rugged transient Performance for increased reliability G Excellent Current sharing in parallel operation Low EMI TO-220AB GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 24 C C I T = 100C Continuous Collector Current 12 C C I Pulse Collector Current 48 CM Clamped Inductive Load Current I 48 A LM I T = 25C Diode Continous Forward Current 24 F C I T = 100C Diode Continous Forward Current 12 F C I Diode Maximum Forward Current 48 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 140 W D C P T = 100C Maximum Power Dissipation 70 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 1.07 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 3.66 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 1 www.irf.com 04/11/08IRGB4056DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100A CT6 (BR)CES 600 V GE C V / T (BR)CES J Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) CT6 GE C 1.55 1.85 I = 12A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 1.90 V I = 12A, V = 15V, T = 150C 9,10,11 CE(on) C GE J I = 12A, V = 15V, T = 175C 1.97 C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 350A 9, 10, GE(th) CE GE C V / TJ V = V , I = 1.0mA (25C - 175C) 11, 12 GE(th) Threshold Voltage temp. coefficient -18 mV/C CE GE C gfe Forward Transconductance 7.7 S V = 50V, I = 12A, PW = 80s CE C I Collector-to-Emitter Leakage Current 2.0 25 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 175C 475 GE CE J V Diode Forward Voltage Drop 2.10 3.10 V I = 12A 8 FM F 1.61 I = 12A, T = 175C F J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 25 38 I = 12A 24 g C Q V = 15V CT1 ge Gate-to-Emitter Charge (turn-on) 7.0 11 nC GE Q Gate-to-Collector Charge (turn-on) 11 16 V = 400V gc CC E Turn-On Switching Loss 75 118 I = 12A, V = 400V, V = 15V CT4 on C CC GE E R = 22 , L = 200H, L = 150nH, T = 25C Turn-Off Switching Loss 225 273 J off G S J E Total Switching Loss 300 391 Energy losses include tail & diode reverse recovery total t Turn-On delay time 31 40 I = 12A, V = 400V, V = 15V CT4 d(on) C CC GE t R = 22 , L = 200H, L = 150nH, T = 25C Rise time 17 24 ns r G S J t Turn-Off delay time 83 94 d(off) t Fall time 24 31 f E I = 12A, V = 400V, V =15V Turn-On Switching Loss 185 13, 15 on C CC GE E Turn-Off Switching Loss 355 J R =22 , L=100H, L =150nH, T = 175C CT4 off G S J E Energy losses include tail & diode reverse recovery WF1, WF2 Total Switching Loss 540 total t Turn-On delay time 30 I = 12A, V = 400V, V = 15V 14, 16 d(on) C CC GE t Rise time 18 ns R = 22 , L = 200H, L = 150nH CT4 r G S t T = 175C WF1 Turn-Off delay time 102 d(off) J t Fall time 41 WF2 f C Input Capacitance 765 pF V = 0V 23 ies GE C V = 30V Output Capacitance 52 oes CC C Reverse Transfer Capacitance 23 f = 1.0Mhz res T = 175C, I = 48A 4 J C V = 480V, Vp =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 CC Rg = 22 , V = +15V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V 22, CT3 CC Rg = 22 , V = +15V to 0V WF4 GE Erec Reverse Recovery Energy of the Diode 280 J T = 175C 17, 18, 19 J t V = 400V, I = 12A 20, 21 Diode Reverse Recovery Time 68 ns rr CC F I Peak Reverse Recovery Current 19 A V = 15V, Rg = 22 , L =200H, L = 150nH WF3 rr GE s Notes: V = 80% (V ), V = 20V, L = 100H, R = 22 . CC CES GE G This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES 2 www.irf.com