About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGB30B60KPBF


IGBT Transistors 600V UltraFast 10-30kHz IGBT
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USD 1.8192

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Single600 V2.35 V+/- 20 V78 A 370 W TO - 220 - 3TubeSiThrough Hole370 W- 55 C  
IRGSL30B60KPBF


IGBT Transistors 600V UltraFast 10-30kHz IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.8203

Multiples of: 1

Single600 V2.35 V+/- 20 V78 A 370 W TO - 262TubeSiThrough Hole370 W- 55 C  
IRG4RC10UDTRRP


Trans IGBT Chip N-CH 600V 8.5A 3-Pin(2+Tab) DPAK T/R
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USD 1.8263

Multiples of: 3000

                
IRGB20B60PD1PBF


Transistor: IGBT; 600V; 40A; 215W; TO220AB
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USD 1.833

Multiples of: 1

Single600 V2.35 V+/- 20 V40 A100 nA215 W TO - 220 - 3TubeSiThrough Hole215 W- 55 C+ 150 C 
IRG4IBC30UDPBF


IGBT Transistors 600V UltraFast 8-60kHz
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USD 1.8387

Multiples of: 50

Single600 V2.1 V+/- 20 V17 A100 nA45 W TO - 220 - 3 FPTubeSiThrough Hole45 W- 55 C+ 150 C 
SGP30N60HS


IGBT Transistors HIGH SPEED NPT TECH 600V 30A
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USD 1.8463

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CSgp30n60
IHW25N120R2FKSA1


IGBT Transistors IGBT PRODUCTS
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USD 1.8513

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        TO - 247 - 3TubeSi    Rc
IRG4BC30S-SPBF


IGBT Transistors 600V DC-1kHz
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USD 1.859

Multiples of: 1

Single600 V1.6 V+/- 20 V34 A 100 W D - PAK - 3Tube Smd/Smt - 55 C  
IRG4BC40WPBF


Transistor: IGBT; 600V; 40A; 160W; TO220AB
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USD 1.8592

Multiples of: 1

Single600 V2.5 V+/- 20 V40 A 160 W TO - 220 - 3TubeSiThrough Hole160 W- 55 C  
IKP20N65F5XKSA1


IGBT Transistors INDUSTRY 14
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USD 1.876

Multiples of: 1

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