PD 91571A UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE FeaturesFeaturesFeatures C FeaturesFeatures UltraFast: Optimized for medium operating V = 600V CES frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). V = 2.15V CE(on) typ. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G V = 15V, I = 5.0A previous generation GE C TM IGBT co-packaged with HEXFRED ultrafast, E ultra-soft-recovery anti-parallel diodes for use in t (typ.) = 140ns f n-channel bridge configurations Industry standard TO-252AA package Benefits Generation 4 IGBT s offer highest efficiencies available IGBT s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT s . Minimized recovery characteristics require less/no snubbing D-PAK Lower losses than MOSFET s conduction and Diode TO-252AA losses Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 8.5 C C I T = 100C Continuous Collector Current 5.0 C C I Pulsed Collector Current 34 A CM I Clamped Inductive Load Current 34 LM I T = 100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 16 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 38 D C W P T = 100C Maximum Power Dissipation 15 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 3.3 JC R Junction-to-Case - Diode 7.0 C/W JC R Junction-to-Ambient (PCB mount)* 50 JA Wt Weight 0.3 (0.01) g (oz) Details of note through are on the last page www.irf.com 1 12/30/00IRG4RC10UD Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 VV = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.54 V/CV = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.15 2.6 I = 5.0A V = 15V CE(on) C GE 2.61 VI = 8.5A See Fig. 2, 5 C 2.30 I = 5.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -8.7 mV/CV = V , I = 250A GE(th) J CE GE C g Forward Transconductance 2.8 4.2 SV = 100V, I = 5.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 4.0A See Fig. 13 FM C 1.4 1.7 I = 4.0A, T = 125C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 15 22 I = 5.0A g C Qge Gate - Emitter Charge (turn-on) 2.6 4.0 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 5.8 8.7 V = 15V gc GE t Turn-On Delay Time 40 T = 25C d(on) J t Rise Time 16 ns I = 5.0A, V = 480V r C CC t Turn-Off Delay Time 87 130 V = 15V, R = 100 d(off) GE G t Fall Time 140 210 Energy losses includetai and f E Turn-On Switching Loss 0.14 diode reverse recovery. on E Turn-Off Switching Loss 0.12 mJ See Fig. 9, 10, 18 off E Total Switching Loss 0.26 0.33 ts t Turn-On Delay Time 38 T = 150C, See Fig. 11, 18 d(on) J t Rise Time 18 ns I = 5.0A, V = 480V r C CC t Turn-Off Delay Time 95 V = 15V, R = 100 d(off) GE G t Fall Time 250 Energy losses includetai and f E Total Switching Loss 0.45 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 270 V = 0V ies GE C Output Capacitance 21 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 3.5 = 1.0MHz res t Diode Reverse Recovery Time 28 42 ns T = 25C See Fig. rr J 38 57 T = 125C 14 I = 4.0A J F I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C See Fig. rr J 3.7 6.7 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 40 60 nC T = 25C See Fig. rr J 70 105 T = 125C 16 di/dt = 200A/s J di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C See Fig. (rec)M J During t 235 T = 125C 17 b J 2 www.irf.com