SMPS IGBT IRGB20B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Applications V typ. = 2.05V Telecom and Server SMPS CE(on) V = 15V I = 13.0A PFC and ZVS SMPS Circuits GE C Uninterruptable Power Supplies Consumer Electronics Power Supplies Equivalent MOSFET G Lead-Free Parameters Features R typ. = 158m CE(on) E NPT Technology, Positive Temperature Coefficient I (FET equivalent) = 20A D Lower V (SAT) n-channel CE Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Benefits E C Parallel Operation for Higher Current Applications G Lower Conduction Losses and Switching Losses TO-220AB Higher Switching Frequency up to 150kHz Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 600 V V CES I T = 25C Continuous Collector Current 40 C C Continuous Collector Current 22 I T = 100C C C I Pulse Collector Current (Ref. Fig. C.T.4) 80 CM Clamped Inductive Load Current I 80 A LM Diode Continous Forward Current 10 I T = 25C F C I T = 100C Diode Continous Forward Current 4 F C Maximum Repetitive Forward Current I 16 FRM Gate-to-Emitter Voltage 20 V V GE P T = 25C Maximum Power Dissipation 215 W D C P T = 100C Maximum Power Dissipation 86 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.58 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 5.0 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 R JA Weight 2 (0.07)g (oz) IRGB20B60PD1PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V V = 0V, I = 500A (BR)CES Collector-to-Emitter Breakdown Voltage 600 V GE C V /T Temperature Coeff. of Breakdown Voltage 0.32 V/C V = 0V, I = 1mA (25C-125C) (BR)CES J GE C R Internal Gate Resistance 4.3 1MHz, Open Collector G I = 13A, V = 15V 2.05 2.35 4, 5,6,8,9 C GE V Collector-to-Emitter Saturation Voltage 2.50 2.80 V I = 20A, V = 15V CE(on) C GE 2.65 3.00 I = 13A, V = 15V, T = 125C C GE J I = 20A, V = 15V, T = 125C 3.30 3.70 C GE J V Gate Threshold Voltage 3.0 4.0 5.0 V I = 250A 7,8,9 GE(th) C V /TJ Threshold Voltage temp. coefficient -11 mV/C V = V , I = 1.0mA GE(th) CE GE C V = 50V, I = 40A, PW = 80s gfe Forward Transconductance 19 S CE C I Collector-to-Emitter Leakage Current 1.0 250 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 125C 0.1 mA GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 4.0A, V = 0V 10 FM F GE 1.4 1.7 I = 4.0A, V = 0V, T = 125C F GE J I V = 20V, V = 0V Gate-to-Emitter Leakage Current 100 nA GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) 68 102 I = 13A 17 C Q Gate-to-Collector Charge (turn-on) 24 36 nC V = 400V CT1 gc CC Q = 15V Gate-to-Emitter Charge (turn-on) 10 15 V ge GE E Turn-On Switching Loss 95 140 I = 13A, V = 390V CT3 on C CC E Turn-Off Switching Loss 100 145 J V = +15V, R = 10, L = 200H off GE G E T = 25C Total Switching Loss 195 285 total J t Turn-On delay time 20 26 I = 13A, V = 390V CT3 d(on) C CC t V = +15V, R = 10, L = 200H Rise time 5.0 7.0 ns r GE G t Turn-Off delay time 115 135 T = 25C d(off) J t Fall time 6.0 8.0 f E I = 13A, V = 390V Turn-On Switching Loss 165 215 CT3 on C CC E Turn-Off Switching Loss 150 195 J V = +15V, R = 10, L = 200H 11,13 off GE G E Total Switching Loss 315 410 T = 125C WF1,WF2 total J t I = 13A, V = 390V Turn-On delay time 19 25 CT3 d(on) C CC t Rise time 6.0 8.0 ns V = +15V, R = 10, L = 200H 12,14 r GE G t T = 125C WF1,WF2 d(off) Turn-Off delay time 125 140 J t Fall time 13 17 f C Input Capacitance 1560 V = 0V 16 ies GE C Output Capacitance 95 V = 30V oes CC C Reverse Transfer Capacitance 20 pF f = 1Mhz res Effective Output Capacitance (Time Related) C eff. 83 V = 0V, V = 0V to 480V 15 oes GE CE Effective Output Capacitance (Energy Related) C eff. (ER) 61 oes T = 150C, I = 80A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 22, V = +15V to 0V GE t Diode Reverse Recovery Time 28 42 ns T = 25C I = 4.0A, V = 200V, 19 rr J F R 38 57 T = 125C di/dt = 200A/s J Q T = 25C I = 4.0A, V = 200V, Diode Reverse Recovery Charge 40 60 nC 21 rr J F R 70 105 T = 125C di/dt = 200A/s J I T = 25C I = 4.0A, V = 200V, Peak Reverse Recovery Current 2.9 5.2 A 19,20,21,22 rr J F R 3.7 6.7 T = 125C di/dt = 200A/s CT5 J Notes: R typ. = equivalent on-resistance = V typ. / I , where V typ. = 2.05V and I = 13A. I (FET Equivalent) is the equivalent MOSFET I rating 25C for CE(on) CE(on) C CE(on) C D D applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V = 80% (V ), V = 15V, L = 28H, R = 22. CC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery. Data generated with use of Diode 8ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oes oes CE CES C eff.(ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 to 80% V . oes oes CE CES 2 www.irf.com