IHW25N120R2FKSA1 Infineon

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI 1 Qualified according to JEDEC for target applications PG-TO-247-3 Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IHW25N120R2 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.41 K/W thJC junction case Diode thermal resistance, R 0.41 thJCD junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V V =0V, I =500A (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =25A CE(sat) GE C T =25C - 1.6 1.8 j - 1.95 - T =150C j - 2.0 - T =175C j Diode forward voltage V V =0V, I =25A F GE F T =25C - 1.5 1.75 j - 1.75 - T =150C j - 1.8 - T =175C j Gate-emitter threshold voltage V I =0.58mA, 5.1 5.8 6.4 GE(th) C V =V CE GE Zero gate voltage collector current I V =1200V, A CES CE V =0V GE - - 4 T =25C j - - 2500 T =175C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =25A - 16.3 - S fs CE C Integrated gate resistor R none Gint 2 Rev. 2.3 Nov. 09 Power Semiconductors