About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHFW40N65R5SXKSA1


IGBT Trench Field Stop 650 V 61 A 108 W Through Hole PG-HSIP247-3-2
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USD 2.8358

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IGZ50N65H5XKSA1


IGBT Transistors IGBT PRODUCTS
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USD 2.8405

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AUIRGS30B60KTRL


IGBT Transistors 600V AUTO ULTRAFAST 10-30 KHZ IGBT
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USD 2.8421

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 600 V2.35 V 78 A  Aec - Q101DPAK - 3Cut TapeSiSmd/Smt370 W   
IRG7PK35UD1PbF


IGBT Transistors 1400V Trench IGBT 25A, COPAK-247AC
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USD 2.8694

Multiples of: 25

        TO - 247AC - 3TubeSiThrough Hole    
IRGS30B60KTRRP


IGBT Transistors 600V 30AD2PAK
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USD 2.875

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Single600 V1.95 V+/- 20 V78 A100 nA  D2PAKReelSiSmd/Smt370 W- 55 C+ 175 C 
SKW07N120FKSA1


Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247
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USD 2.8809

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IRG8P08N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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USD 2.8848

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Single1200 V1.7 V30 V15 A100 nA  TO - 247AD - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
IRGB4062DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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USD 2.8942

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Single600 V1.95 V+/- 20 V48 A 250 W TO - 220 - 3Tube Through Hole - 55 C  
IRG4PC40UDPBF


IGBT Transistors 600V UltraFast 8-60kHz
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USD 2.9171

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Single600 V2.15 V20 V40 A100 nA160 W TO - 247 - 3TubeSiThrough Hole160 W- 55 C+ 150 C 
IHW40N60RFFKSA1


Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247
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USD 2.933

Multiples of: 148

                
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