IRGB30B60KPbF IRGS30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR IRGSL30B60KPbF C V = 600V CES Features I = 50A, T =100C C C Low VCE (on) Non Punch Through IGBT Technology at T =175C J 10s Short Circuit Capability G Square RBSOA t > 10s, T =150C sc J Positive VCE (on) Temperature Coefficient E Maximum Junction Temperature rated at 175C V typ. = 1.95V CE(on) n-channel Lead-Free Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation 2 TO-220AB D Pak TO-262 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES 78 I T = 25C Continuous Collector Current C C Continuous Collector Current 50 A I T = 100C C C I Pulse Collector Current (Ref.Fig.C.T.5) 120 CM I Clamped Inductive Load current 120 LM V RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V ISOL V Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 370 W D C Maximum Power Dissipation 180 P T = 100C D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 0.41* C/W JC R Case-to-Sink, flat, greased surface 0.50 CS Junction-to-Ambient, typical socket mount R 62 JA Junction-to-Ambient (PCB Mount, Steady State) R 40 JA WtWeight 1.44g * R (end of life) = 0.65C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150C JC and is accounted for by the physical wearout of the die attach medium. www.irf.com 1 05/17/05 IRGB/S/SL30B60KPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.40 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C I = 30A, V = 15V, T = 25C 1.95 2.35 5,6,7 C GE J V Collector-to-Emitter Voltage 2.40 2.75 V I = 30A, V = 15V, T = 150C 8,9,10 CE(on) C GE J 2.6 2.95 I = 30A, V = 15V, T = 175C C GE J V V = V , I = 250A Gate Threshold Voltage 3.5 4.5 5.5 V 8,9,10 GE(th) CE GE C V /T Threshold Voltage temp. coefficient -10 mV/C V = V , I = 1.0mA (25C-150C) 11 GE(th) J CE GE C gfe Forward Transconductance 18 S V = 50V, I = 50A, PW = 80s CE C V = 0V, V = 600V 5.0 250 GE CE I Zero Gate Voltage Collector Current 1000 2000 A V = 0V, V = 600V, T = 150C CES GE CE J V = 0V, V = 600V, T = 175C 1830 3000 GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 102 153 I = 30A 17 g C Q V = 400V Gate-to-Emitter Charge (turn-on) 14 21 nC CT1 ge CC Q Gate-to-Collector Charge (turn-on) 44 66 V = 15V gc GE E Turn-On Switching Loss 350 620 I = 30A, V = 400V CT4 on C CC E V = 15V, R = 10, L = 200H off Turn-Off Switching Loss 825 955 J GE G E Total Switching Loss 1175 1575 T = 25C tot J t Turn-On delay time 46 60 I = 30A, V = 400V d(on) C CC t V = 15V, R = 10, L = 200H Rise time 28 39 ns CT4 r GE G t Turn-Off delay time 185 200 T = 25C d(off) J t Fall time 31 40 f E Turn-On Switching Loss 635 1085 I = 30A, V = 400V CT4 on C CC E Turn-Off Switching Loss 1150 1350 J V = 15V, R = 10, L = 200H 12,14 off GE G E T = 150C Total Switching Loss 1785 2435 WF1,WF2 tot J t Turn-On delay time 46 60 I = 30A, V = 400V 13,15 d(on) C CC t Rise time 28 39 ns V = 15V, R = 10 , L = 200H CT4 r GE G t T = 150C Turn-Off delay time 205 235 WF1 d(off) J t Fall time 32 42 WF2 f L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 1750 2500 V = 0V ies GE C Output Capacitance 160 255 pF V = 30V 16 oes CC C Reverse Transfer Capacitance 60 90 f = 1.0MHz res T = 150C, I = 120A, Vp = 600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE J C 4 V =500V,V = +15V to 0V,R =10 CT2 CC GE G T = 150C, Vp = 600V, R = 10 SCSOA Short Circuit Safe Operating Area 10 s CT3 J G V =360V,V = +15V to 0V WF3 CC GE I (Peak) Peak Short Circuit Collector Current 200 A WF3 SC Note to are on page 13 2 www.irf.com