IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C V = 1400V C CES = 20A, T =100C I C C T = 150C J(max) G E E C C G G V typ. = 2.0V IC = 20A CE(ON) E IRG7PK35UD1PbF IRG7PK35UD1EPbF n-channel TO247AC TO247AD Applications Induction heating G C E Microwave ovens Gate Collector Emitter Soft switching applications Features Benefits High efficiency in a wide range of soft switching Low V , ultra-low V , and turn-off soft switching losses CE(ON) F applications and switching frequencies Positive V temperature coefficient and tight distribution CE (ON) Excellent current sharing in parallel operation of parameters Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PK35UD1PbF TO-247AC Tube 25 IRG7PK35UD1PbF IRG7PK35UD1-EPbF TO-247AD Tube 25 IRG7PK35UD1-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1400 V CES I T = 25C Continuous Collector Current 40 C C I T = 100C Continuous Collector Current 20 C C A I Pulse Collector Current, V = 15V 200 CM GE I Clamped Inductive Load Current, V = 20V 80 LM GE I T = 25C Diode Continuous Forward Current 40 F C I T = 100C Diode Continuous Forward Current 20 F C V Continuous Gate-to-Emitter Voltage 30 V GE T = 25C P Maximum Power Dissipation 167 D C W P T = 100C Maximum Power Dissipation 67 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (IGBT) 0.75 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case (Diode) 1.4 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions 2.0 2.35 V I = 20A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.4 I = 20A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 600A GE(th) CE GE C gfe Forward Transconductance 21 S V = 50V, I = 20A, PW = 20s CE C 1.0 100 A V = 0V, V = 1400V GE CE I Collector-to-Emitter Leakage Current CES 150 V = 0V, V = 1400V, T = 150C GE CE J I 100 nA V = 30V Gate-to-Emitter Leakage Current GES GE 1.30 1.43 V I = 20A F V Diode Forward Voltage Drop F 1.25 I = 20A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 65 98 I = 20A g C Q Gate-to-Emitter Charge (turn-on) 15 23 nC V = 15V ge GE V = 600V Q Gate-to-Collector Charge (turn-on) 25 38 gc CC I = 20A, V = 600V, V = 15V C CC GE E Turn-Off Switching Loss 0.65 0.90 mJ off R = 10, T = 25C G J t Turn-Off delay time 150 170 Energy losses include tail d(off) ns t Fall time 75 95 f I = 20A, V = 600V, V = 15V C CC GE E Turn-Off Switching Loss 1.3 mJ off R = 10, T = 150C G J t Turn-Off delay time 180 Energy losses include tail d(off) ns t Fall time 180 f C Input Capacitance 2200 V = 0V ies GE C Output Capacitance 70 pF V = 30V oes CC C Reverse Transfer Capacitance 35 f = 1.0MHz res T = 150C, I = 80A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 1120V, Vp 1400V CC R = 10, V = +20V to 0V G GE Notes: FBSOA operating conditions only. Pulse width limited by max. junction temperature. V = 80% (V ), V = 20V, R = 10 . CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback February 27, 2014