INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features V = 600V CES Low V Trench IGBT Technology CE (ON) Low switching losses I = 24A, T = 100C C C Maximum Junction temperature 175 C 5 S short circuit SOA G t 5s, T = 175C SC J(max) Square RBSOA 100% of the parts tested for I LM E typ. = 1.65V V CE(on) Positive V Temperature co-efficient CE (ON) n-channel Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution C C C Lead Free Package Benefits E E High Efficiency in a wide range of applications E C C C G Suitable for a wide range of switching frequencies due to G G Low V and Low Switching losses CE (ON) Rugged transient Performance for increased reliability TO-220AB TO-247AC TO-247AD IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF Excellent Current sharing in parallel operation Low EMI G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 48 C C I T = 100C Continuous Collector Current 24 C C I Pulse Collector Current, V = 15V 72 CM GE I LM Clamped Inductive Load Current, V = 20V 96 A GE I T = 25C Diode Continous Forward Current 48 F C I T = 100C Diode Continous Forward Current 24 F C I Diode Maximum Forward Current 96 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 250 W D C P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB 0.60 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB 1.53 JC R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 0.65 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 1.62 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 JA Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100A CT6 600 V (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J GE C 1.60 1.95 I = 24A, V = 15V, T = 25C 5,6,7 C GE J V I = 24A, V = 15V, T = 150C Collector-to-Emitter Saturation Voltage 2.03 V 9,10,11 CE(on) C GE J 2.04 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700 A 9, 10, GE(th) CE GE C V / TJ V = V , I = 1.0mA (25C - 175C) Threshold Voltage temp. coefficient -18 mV/C 11, 12 GE(th) CE GE C gfe Forward Transconductance 17 S V = 50V, I = 24A, PW = 80 s CE C I V = 0V, V = 600V Collector-to-Emitter Leakage Current 2.0 25 A CES GE CE 775 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.80 2.6 V I = 24A 8 FM F I = 24A, T = 175C 1.28 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 75 I = 24A 24 g C Q V = 15V CT1 Gate-to-Emitter Charge (turn-on) 13 20 nC ge GE Q Gate-to-Collector Charge (turn-on) 21 31 V = 400V gc CC E Turn-On Switching Loss 115 201 I = 24A, V = 400V, V = 15V CT4 on C CC GE E R = 10, L = 200H, L = 150nH, T = 25C Turn-Off Switching Loss 600 700 J off G S J E Total Switching Loss 715 901 Energy losses include tail & diode reverse recovery total t I = 24A, V = 400V, V = 15V CT4 Turn-On delay time 41 53 d(on) C CC GE t Rise time 22 31 ns R = 10 , L = 200H, L = 150nH, T = 25C r G S J t Turn-Off delay time 104 115 d(off) t Fall time 29 41 f E Turn-On Switching Loss 420 I = 24A, V = 400V, V =15V 13, 15 on C CC GE E Turn-Off Switching Loss 840 J R =10, L= 200 H, L =150nH, T = 175C CT4 off G S J E Total Switching Loss 1260 Energy losses include tail & diode reverse recovery WF1, WF2 total t Turn-On delay time 40 I = 24A, V = 400V, V = 15V 14, 16 d(on) C CC GE t Rise time 24 ns R = 10, L = 200H, L = 150nH CT4 r G S t T = 175C WF1 Turn-Off delay time 125 d(off) J t Fall time 39 WF2 f C Input Capacitance 1490 pF V = 0V 23 ies GE C V = 30V Output Capacitance 129 oes CC C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 175C, I = 96A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 10, V = +20V to 0V GE V = 400V, Vp =600V 22, CT3 SCSOA Short Circuit Safe Operating Area 5 s CC Rg = 10, V = +15V to 0V WF4 GE Erec Reverse Recovery Energy of the Diode 621 J T = 175C 17, 18, 19 J t V = 400V, I = 24A Diode Reverse Recovery Time 89 ns 20, 21 rr CC F I Peak Reverse Recovery Current 37 A V = 15V, Rg = 10, L =200 H, L = 150nH WF3 rr GE s Notes: V = 80% (V ), V = 20V, L = 100H, R = 10 CC CES GE G This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES