About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N100T


Infineon Technologies IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.8876
Multiples of: 1

Single1000 V1.8 V20 V60 A600 nA  TO - 247 - 3TubeSiThrough Hole412 W- 55 C+ 175 CIgw30n100
IRG4PC60FPBF


Transistor: IGBT; 600V; 90A; 520W; TO247-3
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Infineon Availability : 0
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USD 3.8932
Multiples of: 25

Single600 V1.8 V+/- 20 V90 A 520 W TO - 247TubeSiThrough Hole520 W- 55 C  
IRGP4630D-EPBF


IGBT Transistors G6, 600V, 30A, COPAK-247AD
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Infineon Availability : 0
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USD 3.9468
Multiples of: 1

         Tube      
IRGP4078DPBF


International Rectifier IGBT Transistors 600V IGBT w Ultra-Low VF
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Infineon Availability : 0
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USD 3.95
Multiples of: 1

Single600 V1.9 V20 V74 A100 nA  TO - 247AC - 3TubeSiThrough Hole278 W- 55 C+ 175 C 
IRG7PH42UPBF


Transistor: IGBT; 1200V; 90A; 385W; TO247-3
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Infineon Availability : 0
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USD 3.9537
Multiples of: 1

Single1.2 kV2 V+/- 30 V90 A 385 W TO - 247TubeSiThrough Hole385 W- 55 C  
IHW30N160R2FKSA1


Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
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Infineon Availability : 0
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USD 3.9669
Multiples of: 1

Single1600 V1.8 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole312 W- 40 C+ 175 CXhw30n160
IRG8P15N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 3.975
Multiples of: 1

Single1200 V1.7 V30 V30 A100 nA125 W TO - 247AC - 3TubeSiThrough Hole125 W- 40 C+ 150 C 
IKW50N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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USD 3.9755
Multiples of: 1

 650 V2.1 V20 V80 A100 nA  PG - TO - 247 - 3  Through Hole145 W   
IKW75N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon Availability : 0
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USD 3.979
Multiples of: 1

Single650 V1.65 V20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
IKW40T120XK


IGBT Transistors LOW LOSS DuoPack 1200V 40A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.9846
Multiples of: 1

Single1200 V1.7 V+/- 20 V75 A600 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 150 CTrenchstop
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