IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C V = 600V CES Features I = 50A, T =100C C C Low V Trench IGBT Technology CE (ON) T = 175C Low Switching Losses J(MAX) G Maximum Junction temperature 175C V typ. = 1.9V 5 s short circuit SOA CE(ON) E Square RBSOA n-channel 100% of the parts tested for I LM Positive V Temperature co-efficient CE (ON) C C Ultra-low VF Hyperfast Diode Tight parameter distribution Benefits Device optimized for induction heating and soft switching E C E applications G C G High Efficiency due to Low V , Low Switching Losses CE(ON) IRGP4078DPbF and Ultra-low V IRGP4078D-EP F TO-247AC TO-247AD Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation G C E Low EMI Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4078DPbF TO-247AC Tube 25 IRGP4078DPbF IRGP4078D-EPbF TO-247AD Tube 25 IRGP4078D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 74 C C I T = 100C Continuous Collector Current 50 C C I Pulse Collector Current, V = 15V 150 CM GE I Clamped Inductive Load Current, V = 20V 200 A LM GE I T = 25C Diode Continuous Forward Current 44 F C I T = 100C Diode Continuous Forward Current 25 F C I T = 25C Diode Non Repetitive Peak Surge Current T = 25C 120 FSM C J I Tc = 100C Diode Repetitive Peak Forward Current at tp=10s 79 FRM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 278 W D C P T = 100C Maximum Power Dissipation 139 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback July 17, 2014 IRGP4078DPbF/EP Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.54 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2.55 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.45 V/C V = 0V, I = 1mA (25C-175C) V /T (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.9 2.2 V I = 50A, V = 15V, T = 25C CE(on) C GE J 2.5 I = 50A, V = 15V, T = 150C C GE J 2.6 I = 50A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.0mA GE(th) CE GE C gfe Forward Transconductance 26 S V = 50V, I = 50A, PW = 20s CE C I Collector-to-Emitter Leakage Current 1.0 80 A V = 0V, V = 600V CES GE CE 600 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.17 1.30 V I = 25A FM F 1.06 I = 25A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 61 92 I = 50A g C Q Gate-to-Emitter Charge (turn-on) 20 30 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 22 33 V = 300V gc CC E Turn-Off Switching Loss 1.1 1.4 mJ I = 50A, V = 400V, V = 15V off C CC GE R = 10 , L = 210H, T = 25C G J t Turn-Off delay time 116 ns Energy losses include tail & diode d(off) t Fall time 33 reverse recovery f E Turn-Off Switching Loss 1.5 mJ I = 50A, V = 400V, V =15V off C CC GE R = 10 , L = 210H, T = 175C G J t Turn-Off delay time 113 ns Energy losses include tail & diode d(off) t Fall time 54 reverse recovery f C Input Capacitance 2105 V = 0V ies GE C Output Capacitance 131 pF V = 30V oes CC C Reverse Transfer Capacitance 59 f = 1.0Mhz res T = 175C, I = 200A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp 600V CC Rg = 10 , V = +15V to 0V GE Notes: V = 80% (V ), V = 20V, L = 23H, R = 10 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES fsw = 20KHz, refer to figure 19. R is measured at T of approximately 90C. J Sinusoidal half wave, t = 10ms. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback July 17, 2014