IGW30N100T TrenchStop series Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology C TrenchStop and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat Designed for: - frequency Converters - uninterrupted Power Supply Low EMI Low gate charge Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IGW30N100T TrenchStop series UU11 22 11 NN 22 9922 22 55 11 9999 0022NN DD 99 99 == 66 UU11 22 11 NN 22 9922 22 55 11 9999 0022NN DD 99 99 == 66 Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic 011 20 3 22 7 60D 012 % PVWR X B 3, + B + , + + 011 20 3 22 9 25 2 0 012 % + + - +- + ( 2 3 22 2N 9N016 012 % B P OR 3, B + 8 / + B Y 0 % 2 012 % 011 20 5 2 X , +- ( 2 3 22 1 % 5 2 B X B 8 , 9 0 65 2 %Z , H 2 % 2 6 % 2 9 920 B 0 UU11 22 11 NN 22 9922 22 55 11 9999 0022NN DD 99 99 == 66 UU11 22 11 NN 22 9922 22 55 11 9999 0022NN DD 99 99 == 66 Value Parameter Symbol Conditions Unit min. typ. max. Dynamic Characteristic 52 2 - .52 52 2 E B = + a 9 2 9= 2 -8 , ( 2 N % bB +- B + 2 1 3 22 65 2 3 95 6 33 > + - A = 03 c + 9 HHHHDDDD 2222 NNNN %%%% NNNN 2222 99992222 66665555 2222 cccc0000 6666 2222 Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic 5 0 6 1 2 3 2dPEeR 9 8 , 9 2 3 2 + 9 B T+ B +8 cg + 5 0== 6 1 2 3 2dPEZZR 9 g a a 11 2 3 2Z / 9 cg g = 03 a % U U % 1099 9 156 h2 1i 6 5 0 % UEe 3f 6 06 9 0 59 % 2N 5 0== % UEZZ + 8 3f S) *+ 650 02 1 9D 2 N % % U 3f 2