IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 1200V CES C I = 15A, T =100C C C E t 10s, T = 150C SC J(max) E G C G C G E V typ. = 1.7V IC = 10A CE(ON) IRG8P15N120KDPbF IRG8P15N120KDEPbF n-channel TO247AC TO247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Benchmark Low V High Efficiency in a Motor Drive Applications CE(ON) 10 s Short Circuit SOA Increases margin for short circuit protection scheme Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE(ON) Square RBSOA and high I rating Rugged Transient Performance LM- Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG8P15N120KDPbF TO-247AC Tube 25 IRG8P15N120KDPbF IRG8P15N120KD-EPbF TO-247AD Tube 25 IRG8P15N120KD-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current (Silicon Limited) 30 C C I T = 100C Continuous Collector Current 15 C C I Pulse Collector Current (see fig. 2) 30 CM I Clamped Inductive Load Current (see fig. 3) 40 A LM I T = 25C Diode Continuous Forward Current 20 F C I T = 100C Diode Continuous Forward Current 11 F C I Diode Maximum Forward Current 40 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 125 D C W P T = 100C Maximum Power Dissipation 50 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 1.0 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.7 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 1.1 V/C V = 0V, I = 1mA (25C-150C) V /T GE C (BR)CES J 1.7 2.0 V I = 10A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.0 I = 10A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 6.5 V V = V , I = 400A GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -16 mV/C V = V , I = 400A (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 5.7 S V = 50V, I = 10A, PW = 20s CE C 1.0 30 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE 2.1 2.7 V I = 10A F V Diode Forward Voltage Drop F 2.4 I = 10A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 65 98 I = 10A g C Gate-to-Emitter Charge (turn-on) 6.0 9.0 V = 15V Q nC ge GE Q Gate-to-Collector Charge (turn-on) 40 60 V = 600V CC gc E Turn-On Switching Loss 0.6 on E Turn-Off Switching Loss 0.6 mJ off I = 10A, V = 600V, V =15V C CC GE E Total Switching Loss 1.2 total R = 10 , T = 25C G J t Turn-On delay time 15 d(on) Energy losses include tail & diode t Rise time 20 r ns reverse recovery t Turn-Off delay time 170 d(off) t Fall time 200 f E Turn-On Switching Loss 0.9 on E Turn-Off Switching Loss 1.1 mJ off I = 10A, V = 600V, V =15V C CC GE E Total Switching Loss 2.0 total R = 10 , T = 150C G J t Turn-On delay time 15 d(on) Energy losses include tail & diode t Rise time 20 r ns reverse recovery t Turn-Off delay time 250 d(off) t Fall time 330 f C Input Capacitance 1290 V = 0V ies GE C Output Capacitance 60 pF V = 30V oes CC C Reverse Transfer Capacitance 30 f = 1.0Mhz res T = 150C, I = 40A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp 1200V CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 0.8 mJ J V = 600V, I = 10A t Diode Reverse Recovery Time 60 ns CC F rr I Peak Reverse Recovery Current 26 A V = 15V, Rg = 10 rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 4, 2014