About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4660DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
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USD 5.4509

Multiples of: 1

Single600 V1.9 V20 V50 A70 uA  TO - 247 - 3TubeSiThrough Hole134 W- 55 C+ 175 CTrenchstop
IRG7PH37K10D-EPBF


Transistor: IGBT; 1200V; 45A; 216W; TO247-3
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USD 5.4613

Multiples of: 82

      216 W         
IRGP6690DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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USD 5.4699

Multiples of: 71

Single600 V1.65 V20 V140 A200 nA  TO - 247AC - 3TubeSiThrough Hole483 W- 40 C+ 175 C 
AUIRGP66524D0


Transistor: IGBT; IGBT Trench; 600V; 40A; 107W; TO247AC
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USD 5.5046

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      107 W   Igbt Trench     
IRGP4660D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.5396

Multiples of: 2

Single600 V1.9 V20 V50 A70 uA  TO - 247 - 3TubeSiThrough Hole134 W- 55 C+ 175 CTrenchstop
AIKW40N65DH5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.614

Multiples of: 1

         TubeSi    Trenchstop 5 H5
IRGP4263DPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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Infineon Availability : 0
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USD 5.6706

Multiples of: 1

Single650 V1.7 V20 V90 A100 nA  TO - 247AC - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
AUIRGP35B60PD-E


International Rectifier IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm
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USD 5.7253

Multiples of: 400

Single600 V2.15 V+/- 20 V60 A  Aec - Q101TO - 247AD - 3TubeSiThrough Hole308 W- 55 C  
IKZ75N65EH5


IGBT Transistors INDUSTRY 14
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USD 5.75

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IRGP4266PBF


IGBT Transistors 650V Low VCEon Trench IGBT
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Infineon Availability : 0
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USD 5.8088

Multiples of: 1

 650 V2.1 V20 V140 A100 nA450 W TO - 247TubeSiThrough Hole450 W   
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