IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor V = 650V CES C I = 90A, T =100C C C t 5.5s, T = 175C SC J(max) G E E C C V typ. = 1.7V IC = 75A CE(ON) G G E IRGP4266PbF IRGP4266-EPbF n-channel TO-247AC TO-247AD Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of applications and Low V and switching Losses CE(ON) switching frequencies Improved reliability due to rugged hard switching Square RBSOA and Maximum Junction Temperature 175C performance and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5.5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4266PbF TO-247AC Tube 25 IRGP4266PbF IRGP4266-EPbF TO-247AD Tube 25 IRGP4266-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C A I Pulse Collector Current, V=20V 300 CM GE I Clamped Inductive Load Current, V =20V 300 LM GE V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 455 D C W P T = 100C Maximum Power Dissipation 230 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case 0.33 R JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 C/W CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4266PbF/IRGP4266-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 570 mV/C V = 0V, I = 1.0mA (25C-175C) V /T (BR)CES J GE C 1.7 2.1 V I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.7 V V = V , I = 2.1mA GE(th) CE GE C Threshold Voltage temp. coefficient -22 mV/C V =V , I = 2.1mA (25C - 175C) V /TJ CE GE C GE(th) gfe Forward Transconductance 43 S V = 50V, I = 75A, PW = 20s CE C 1.0 25 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 1.1 mA V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 140 210 I = 75A g C V = 15V Q Gate-to-Emitter Charge (turn-on) 40 60 ge nC GE V = 400V Q Gate-to-Collector Charge (turn-on) 60 90 gc CC E Turn-On Switching Loss 3.2 4.2 on E Turn-Off Switching Loss 1.7 2.6 I = 75A, V = 400V, V = 15V mJ C CC GE off E Total Switching Loss 4.9 6.8 R = 10 , L = 200H, T = 25C total G J t Turn-On delay time 80 95 Energy losses include tail & diode d(on) t Rise time 85 105 reverse recovery r ns t Turn-Off delay time 200 220 d(off) t Fall time 40 55 f E Turn-On Switching Loss 4.6 on E Turn-Off Switching Loss 2.4 mJ I = 75A, V = 400V, V =15V C CC GE off E Total Switching Loss 7.0 total R =10 , L=200H,T = 175C G J t Turn-On delay time 60 Energy losses include tail & diode d(on) reverse recovery t Rise time 95 r ns t Turn-Off delay time 205 d(off) t Fall time 60 f C Input Capacitance 4300 V = 0V ies GE C Output Capacitance 230 V = 30V pF CC oes C Reverse Transfer Capacitance 120 f = 1.0Mhz res T = 175C, I = 300A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 520V, Vp 650V CC Rg = 50 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5.5 T = 150C,V = 400V, Vp 600V s J CC Rg = 50 , V = +15V to 0V GE Notes: V = 80% (V ), V = 20V, L = 50H, R = 50 . CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 22, 2014