IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 1200V CES G C G I = 25A, T =100C C C E t 10s, T = 150C SC J(max) E G C C G G E V typ. = 1.9V IC = 15A CE(ON) IRG7PH37K10DPbF IRG7PH37K10DEPbF n-channel TO247AC TO247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH37K10DPBF TO-247AC Tube 25 IRG7PH37K10DPBF IRG7PH37K10D-EPBF TO-247AD Tube 25 IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 45 C C I T = 100C Continuous Collector Current 25 C C A I Pulse Collector Current, V=20V 60 CM GE I Clamped Inductive Load Current, V =20V 60 LM GE I T = 25C Diode Continuous Forward Current 18 F C I T = 100C Diode Continuous Forward Current 10 F C V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 216 D C W P T = 100C Maximum Power Dissipation 86 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.6 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.7 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.93 V/C V = 0V, I = 2mA (25C-150C) V / T GE C (BR)CES J 1.9 2.4 V I = 15A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.4 I = 15A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 7.5 V V = V , I = 720A GE(th) CE GE C V / T Threshold Voltage Temperature Coeff. -15 mV/C V = V , I = 720A (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 11 S V = 50V, I = 15A, PW = 20s CE C 1.0 30 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES 700 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE 2.5 3.0 V I = 6.0A F V Diode Forward Voltage Drop F 2.4 I = 6.0A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 90 135 I = 15A g C Gate-to-Emitter Charge (turn-on) 20 30 V = 15V Q nC ge GE Q Gate-to-Collector Charge (turn-on) 40 60 V = 600V CC gc E Turn-On Switching Loss 1.0 1.9 on E Turn-Off Switching Loss 0.6 0.8 mJ off I = 15A, V = 600V, V =15V C CC GE E Total Switching Loss 1.6 2.7 total R = 10, T = 25C G J t Turn-On delay time 50 65 d(on) Energy losses include tail & diode t Rise time 30 45 r ns reverse recovery t Turn-Off delay time 240 270 d(off) t Fall time 80 100 f E Turn-On Switching Loss 1.4 on E Turn-Off Switching Loss 1.1 mJ off I = 15A, V = 600V, V =15V C CC GE E Total Switching Loss 2.5 total R = 10, T = 150C G J t Turn-On delay time 35 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 260 d(off) t Fall time 270 f C Input Capacitance 2000 V = 0V ies GE C Output Capacitance 90 pF V = 30V oes CC C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 150C, I = 60A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp 1200V CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 250 J J V = 600V, I = 6.0A t Diode Reverse Recovery Time 120 ns CC F rr I Peak Reverse Recovery Current 15 A V = 15V, Rg = 10 rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2013 International Rectifier Submit Datasheet Feedback November 4, 2013