About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...7677787980...
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PH50UD


Transistor: IGBT; 1200V; 45A; 200W; TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.8126
Multiples of: 1

      200 W         
IGW75N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 0
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USD 5.8256
Multiples of: 1

                
IRGP4063D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 48A 5uS 1.65V VCE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.8611
Multiples of: 1

 600 V2.05 V20 V96 A100 nA  TO - 247 - 3TubeSiThrough Hole330 W   
IRG7PH44K10D-EPBF


Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247AD Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.8731
Multiples of: 77

      320 W         
IRG7PH42UD1-EP


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 5.8834
Multiples of: 1

 1.2 kV2 V 85 A   TO - 247 - 3TubeSiThrough Hole313 W   
SGW25N120


IGBT Transistors FAST IGBT NPT TECH 1200V 25A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.9088
Multiples of: 1

         Tube      
IRGP4760D-EPBF


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.9305
Multiples of: 1

Single650 V1.7 V+/- 20 V90 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
IKW50N65H5AXKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.9503
Multiples of: 1

Single650 V1.66 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 H5
IKFW75N60ETXKSA1


IGBT Transistors Infineons 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
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Infineon Availability : 0
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USD 6.0249
Multiples of: 1

Single600 V1.5 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IRG4PSH71UDPBF


Transistor: IGBT; 1200V; 99A; 350W; SUPER247
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Infineon Availability : 0
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USD 6.0512
Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
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