INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V Trench IGBT Technology C CE (ON) V = 600V CES Low switching losses Maximum Junction temperature 175 C I = 48A, T = 100C C C 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of the parts tested for 4X rated current (I ) LM Positive V Temperature co-efficient CE (ON) E V typ. = 1.65V Ultra fast soft Recovery Co-Pak Diode CE(on) n-channel Tight parameter distribution Lead Free Package Benefits C G High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to E Low V and Low Switching losses CE (ON) E C Rugged transient Performance for increased reliability C G G Excellent Current sharing in parallel operation Low EMI IRGP4063D-EPbF IRGP4063DPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T = 25C C C Continuous Collector Current 96 I T = 100C Continuous Collector Current 48 C C I Pulse Collector Current 200 CM Clamped Inductive Load Current I 192 A LM I T = 25C Diode Continous Forward Current 96 F C I T = 100C F C Diode Continous Forward Current 48 Diode Maximum Forward Current I 192 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 W D C P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -55 to +175 J T STG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) JC Thermal Resistance Junction-to-Case-(each IGBT) 0.45 C/W R (Diode) JC Thermal Resistance Junction-to-Case-(each Diode) 0.92 R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 150A CT6 (BR)CES GE C V /T V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J Temperature Coeff. of Breakdown Voltage 0.30 V/C GE C 1.65 2.14 I = 48A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 48A, V = 15V, T = 150C 9,10,11 CE(on) C GE J I = 48A, V = 15V, T = 175C 2.05 C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.4mA 9, 10, GE(th) CE GE C V /TJ V = V , I = 1.0mA (25C - 175C) 11, 12 GE(th) Threshold Voltage temp. coefficient -21 mV/C CE GE C gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 80 s CE C I Collector-to-Emitter Leakage Current 1.0 150 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 175C 450 1000 GE CE J V Diode Forward Voltage Drop 1.95 2.91 V I = 48A 8 FM F 1.45 I = 48A, T = 175C F J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 95 140 I = 48A 24 g C Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V CT1 ge GE Q V = 400V Gate-to-Collector Charge (turn-on) 35 53 gc CC E Turn-On Switching Loss 625 1141 I = 48A, V = 400V, V = 15V CT4 on C CC GE E R = 10, L = 200H, L = 150nH, T = 25C Turn-Off Switching Loss 1275 1481 J off G S J E Total Switching Loss 1900 2622 Energy losses include tail & diode reverse recovery total t Turn-On delay time 60 78 I = 48A, V = 400V, V = 15V CT4 d(on) C CC GE t R = 10, L = 200H, L = 150nH, T = 25C Rise time 40 56 ns r G S J t Turn-Off delay time 145 176 d(off) t Fall time 35 46 f E I = 48A, V = 400V, V =15V Turn-On Switching Loss 1625 13, 15 on C CC GE E Turn-Off Switching Loss 1585 J R =10, L=200H, L =150nH, T = 175C CT4 off G S J E Total Switching Loss 3210 Energy losses include tail & diode reverse recovery WF1, WF2 total t I = 48A, V = 400V, V = 15V 14, 16 Turn-On delay time 55 d(on) C CC GE t Rise time 45 ns R = 10, L = 200H, L = 150nH CT4 r G S t Turn-Off delay time 165 T = 175C WF1 d(off) J t Fall time 45 WF2 f C Input Capacitance 3025 pF V = 0V 23 ies GE C V = 30V Output Capacitance 245 oes CC C Reverse Transfer Capacitance 90 f = 1.0Mhz res T = 175C, I = 192A 4 J C V = 480V, Vp =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 CC Rg = 10, V = +15V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V 22, CT3 CC Rg = 10, V = +15V to 0V WF4 GE Erec Reverse Recovery Energy of the Diode 845 J T = 175C 17, 18, 19 J t V = 400V, I = 48A 20, 21 rr Diode Reverse Recovery Time 115 ns CC F I Peak Reverse Recovery Current 40 A V = 15V, Rg = 10 , L =200 H, L = 150nH WF3 rr GE s Notes: V = 80% (V ), V = 20V, L = 200 H, R = 10. CC CES GE G This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES