IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 650V CES C I = 60A, T =100C C C t 5.5s, T = 175C SC J(max) G E E C C G G E V typ. = 1.7V IC = 48A CE(ON) IRGP4760DPbF IRGP4760DEPbF n-channel TO247AC TO247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4760DPbF TO-247AC Tube 25 IRGP4760DPbF IRGP4760D-EPbF TO-247AD Tube 25 IRGP4760D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 90 C C I T = 100C Continuous Collector Current 60 C C I Pulse Collector Current, V = 15V 144 CM GE I Clamped Inductive Load Current, V = 20V 192 A LM GE I T = 25C Diode Continuous Forward Current 74 F C I T = 100C Diode Continuous Forward Current 45 F C I Diode Maximum Forward Current 192 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 325 D C W P T = 100C Maximum Power Dissipation 160 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.46 R (IGBT) JC Thermal Resistance Junction-to-Case-(each Diode) 0.97 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.69 V/C V = 0V, I = 3mA (25C-175C) V /T GE C (BR)CES J 1.7 2.0 V I = 48A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 48A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.4 V V = V , I = 1.4mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -23 mV/C V = V , I = 1.4mA (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 31 S V = 50V, I = 48A, PW = 20s CE C 1.0 35 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 890 V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.9 2.5 V I = 48A F V Diode Forward Voltage Drop F 1.4 I = 48A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 96 145 I = 48A g C Gate-to-Emitter Charge (turn-on) 30 45 V = 15V Q nC ge GE Q Gate-to-Collector Charge (turn-on) 40 60 V = 400V CC gc E Turn-On Switching Loss 1.7 2.6 on E Turn-Off Switching Loss 1.0 1.9 mJ off I = 48A, V = 400V, V =15V C CC GE E Total Switching Loss 2.7 4.5 total R = 10 , L = 210H, T = 25C G J t Turn-On delay time 70 90 d(on) Energy losses include tail & diode t Rise time 60 80 r ns reverse recovery t Turn-Off delay time 140 160 d(off) t Fall time 30 50 f E Turn-On Switching Loss 2.9 on E Turn-Off Switching Loss 1.4 mJ off I = 48A, V = 400V, V =15V C CC GE E Total Switching Loss 4.3 total R = 10 , L = 210H, T = 175C G J t Turn-On delay time 55 d(on) Energy losses include tail & diode t Rise time 60 r ns reverse recovery t Turn-Off delay time 145 d(off) t Fall time 65 f C Input Capacitance 2935 V = 0V ies GE C Output Capacitance 235 pF V = 30V oes CC C Reverse Transfer Capacitance 84 f = 1.0MHz res T = 175C, I = 192A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 520V, Vp 650V CC V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 370 J J V = 400V, I = 48A t Diode Reverse Recovery Time 170 ns CC F rr I Peak Reverse Recovery Current 25 A V = 15V, Rg = 10 rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 12, 2014