PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features UltraFast switching speed optimized for operating C frequencies 8 to 40kHz in hard switching, 200kHz V = 1200V CES in resonant mode soft switching Generation 4 IGBT design provides tighter parameter distribution and higher efficiency V = 2.52V CE(on) typ. G (minimum switching and conduction losses) than prior generations E V = 15V, I = 50A GE C Industry-benchmark Super-247 package with n-channel higher power handling capability compared to same footprint TO-247 Creepage distance increased to 5.35mm Lead-Free Benefits Generation 4 IGBT s offer highest efficiencies available Maximum power density, twice the power handling of the TO-247, less space than TO-264 IGBTs optimized for specific application conditions SUPER - 247 Cost and space saving in designs that require multiple, paralleled IGBTs TM HEXFRED antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 1200 V I T = 25C Continuous Collector Current 99 A C C I T = 100C Continuous Collector Current 50 C C I Pulse Collector Current 200 CM I Clamped Inductive Load current 200 LM V Gate-to-Emitter Voltage 20 V GE I Tc = 100C Diode Continuous Forward Current 70 F I Diode Maximum Forward Current 200 FM P T = 25C Maximum Power Dissipation 350 W D C P T = 100C Maximum Power Dissipation 140 D C T Operating Junction and -55 to +150 J T STG Storage Temperature Range C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 0.36 C/W JC R Junction-to-Case- Diode 0.36 JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 38 JA N (kgf) Recommended Clip Force 20 (2.0) Wt Weight 6 (0.21) g (oz.) www.irf.com 1 IRG4PSH71UDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage V V = 0V, I = 250A 1200 V (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 19 V V = 0V, I = 1.0A (BR)ECS GE C V /T V = 0V, I = 1mA Temperature Coeff. of Breakdown Voltage 0.78 V/C (BR)CES J GE C 2.52 2.70 V I = 70A V = 15V C GE V Collector-to-Emitter Saturation Voltage 3.17 I = 140A See Fig.2, 5 CE(on) C I = 70A, T = 150C 2.68 C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Threshold Voltage temp. coefficient -9.2 mV/C V = V , I = 1.0mA GE(th) J CE GE C V = 100V, I = 70A gfe Forward Transconductance 48 72 S CE C I Zero Gate Voltage Collector Current 500 A V = 0V, V = 1200V CES GE CE 2.0 V = 0V, V = 10V GE CE V = 0V, V = 1200V, T = 150C 5000 GE CE J V Diode Forward Voltage Drop 2.92 3.9 V I = 70A See Fig.13 FM F 2.88 3.7 I = 70A, T = 150C F J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 70A Total Gate Charge (turn-on) 380 570 g C Q Gate-to-Emitter Charge (turn-on) 61 24 nC V = 400V See Fig.8 ge CC Q Gate-to-Collector Charge (turn-on) 130 200 V = 15V gc GE t I = 70A, V = 960V Turn-On delay time 46 d(on) C CC t Rise time 77 ns V = 15V, R = 5.0 r GE G t Turn-Off delay time 250 350 Energy losses includetai d(off) t Fall time 220 330 See Fig. 9, 10, 11, 14 f E Turn-On Switching Loss 8.8 on E Turn-Off Switching Loss 9.4 mJ off E Total Switching Loss 18.2 19.7 tot t Turn-On delay time 43 T = 150C, See Fig. 9, 10, 11, 14 d(on) J t I = 70A, V = 960V Rise time 78 ns r C CC t Turn-Off delay time 330 V = 15V, R = 5.0 d(off) GE G t Fall time 480 Energy losses includetai f E Total Switching Loss 26 mJ TS L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 6640 V = 0V ies GE C V = 30V, See Fig.7 Output Capacitance 420 pF oes CC C Reverse Transfer Capacitance 60 f = 1.0MHz res T =25C See Fig t Diode Reverse Recovery Time 110 170 ns J rr 180 270 T =125C 14 I = 70A J F T =25C See Fig I Diode Peak Reverse Recovery Current 6.0 9.0 A J rr T =125C 15 V = 200V 8.9 13 J R Q T =25C See Fig Diode Reverse Recovery Charge 350 530 nC J rr 870 1300 T =125C 16 di/dt = 200A/s J di /dt T =25C See Fig Diode Peak Rate of Fall of Recovery 150 230 A/s J (rec)M T =125C 17 During t 130 200 J b 2 www.irf.com