About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB30N65IHL2WG


IGBT Transistors 650V/30A FAST IGBT FSII T
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USD 3.312
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Single650 V1.6 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
AFGHL50T65SQDC


IGBT Transistors Hybrid iGBT 650V 50A FS4 with SiC-SBD
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USD 18.6177
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Single650 V1.6 V20 V100 A400 nA Aec - Q101TO - 247 - 3TubeSicThrough Hole268 W- 55 C+ 175 C 
FGA30N60LSDTU


IGBT Transistors 30A 600V N-Ch Planar
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USD 1.3454
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Single600 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga30n60lsdtu
NGTB10N60FG


IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS
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USD 0.519
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         TubeSi    Ngtb10n60fg
HGTG12N60C3D


Transistor: IGBT; 600V; 12A; 104W; TO247
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USD 1.5811
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      104 W         
FGH40N60SFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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USD 3.1282
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      116 W         
FGH20N60SFDTU


IGBT Transistors 600V 20A Field Stop
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USD 3.6174
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Single600 V 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh20n60sfd
NGTB40N120FL2WAG


IGBT Transistors 1200V/40 FAST IGBT FSII T
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USD 3.9618
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Single1200 V 30 V160 A200 nA  TO - 247 - 4TubeSiThrough Hole268 W- 55 C+ 175 C 
NGTB40N60L2WG


ON Semiconductor IGBT Transistors 600V40A FAST IGBT FSII T
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USD 4.1515
Multiples of: 1

Single600 V2 V20 V80 A200 nA  TO - 247 - 3Tube Through Hole417 W- 55 C+ 175 C 
FGH60N60SMD-F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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USD 9.1646
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Single600 V2.14 V+/- 20 V120 A400 nA  TO - 247 - 3 SiThrough Hole600 W- 55 C+ 175 CFgh60n60sm_F085
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