About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGP3440G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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USD 2.3389
Multiples of: 1

Single400 V1.6 V+/- 10 V26.9 A   TO - 220AB - 3TubeSiThrough Hole166 W- 40 C+ 175 CFgp3440g2_F085
HGTG30N60B3


IGBT Transistors 600V N-Channel IGBT UFS Series
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USD 2.3441
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Single600 V1.45 V+/- 20 V60 A+/- 250 nA208 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CHgtg30n60
NGTB15N120IHRWG


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Rail
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USD 2.3549
Multiples of: 179

Single        Rail/TubeSi    Ngtb15n120ihr
NGTB30N60FWG


IGBT Transistors 600V/30A IGBT NPT TO-247
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USD 2.3685
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Single600 V1.45 V30 V60 A100 nA167 W TO - 247TubeSiThrough Hole167 W- 55 C+ 150 CNgtb30n60fwg
FGH40N60SFDTU-F085


Trans IGBT Chip N-CH 600V 80A Automotive 3-Pin(3+Tab) TO-247 Rail
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USD 2.3717
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FGH50T65SQD_F155


IGBT Transistors 650V FS4 Trench IGBT
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USD 2.4246
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Single650 V1.6 V20 V100 A+/- 400 nA  TO - 247 - 3TubeSiThrough Hole268 W- 55 C+ 175 CFgh50t65sqd
FGH40T65UPD


Fairchild Semiconductor IGBT Transistors 650 V 80 A 268 W
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USD 2.4557
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 650 V2.1 V20 V80 A400 nA  TO - 247TubeSiThrough Hole268 W- 55 C+ 175 CFgh40t65
FGH30T65UPDT_F155


IGBT Transistors 650V, 30A Field Stop Trench IGBT
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USD 2.5015
Multiples of: 3

Single650 V2.1 V20 V60 A400 nA250 W TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 175 CFgh30t65updt_F155
NGTB40N120IHRWG


IGBT Transistors 1200V/40A RC IGBT FSII
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USD 2.5044
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Single1200 V2.3 V25 V80 A100 nA384 W TO - 247TubeSiThrough Hole384 W- 40 C+ 175 CNgtb40n120ihr
FGA50T65SHD


Fairchild Semiconductor IGBT Transistors
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USD 2.5232
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 650 V2.14 V30 V100 A400 nA  TO - 3PNTubeSiThrough Hole319 W- 55 C+ 175 CFga50t65shd
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