About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB30H60DLFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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USD 1.0109

Multiples of: 1000

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt260 W- 55 C+ 175 C600 - 650V Igbts
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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USD 1.0356

Multiples of: 1

 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
STGWT20H60DF


IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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USD 1.0445

Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 CStgwt20h60df
STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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USD 1.0494

Multiples of: 50

Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
STGB25N40LZAG


IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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USD 1.0777

Multiples of: 1

 400 V1.25 V16 V25 A625 uA Aec - Q101D2PAK - 3  Smd/Smt150 W- 55 C+ 175 CStgb25n40lzag
STGD5NB120SZT4


Transistor: IGBT; 1200V; 5A; 75W; DPAK
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USD 1.1139

Multiples of: 1

      75 W         
STGFW20H65FB


STMicroelectronics IGBT Transistors
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USD 1.1149

Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGP19NC60WD


IGBT Transistors N Ch 600V 19A
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USD 1.1232

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 C600 - 650V Igbts
STGW19NC60H


IGBT Transistors 19 A 600V FAST IGBT
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USD 1.1525

Multiples of: 1

         Tube     Stgw19nc60h
STGW20H60DF


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.1735

Multiples of: 30

Single600 V2 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
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