About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA30N120KD


IGBT Transistors 30A 1200V short circuit rugged IGBT
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USD 2.8208
Multiples of: 1

         TubeSi    Stgwa30n120kd
STGWA25S120DF3


STMicroelectronics IGBT Transistors
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USD 2.9055
Multiples of: 1

Single1.2 kV1.6 V+/- 20 V50 A250 nA  TO 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGWT38IH130D


IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
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USD 2.9092
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 1300 V2.8 V25 V55 A100 nA250 W TO - 247Tube Through Hole - 55 C+ 150 CStgwt38ih130d
STGFW80V60F


STMicroelectronics IGBT Transistors
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USD 2.9704
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Single600 V1.85 V+/- 20 V120 A250 nA  TO - 3PFTubeSiThrough Hole79 W- 55 C+ 175 C600 - 650V Igbts
STGWA15S120DF3


STMicroelectronics IGBT Transistors
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USD 2.9965
Multiples of: 1

Single1.2 kV1.55 V+/- 20 V30 A250 nA  TO 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
STGWF40V60DF


IGBT Transistors IGBT & Power Bipolar
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USD 3.0083
Multiples of: 30

                
STGWA20M65DF2


IGBT Transistors Trench gate field-stop IGBT M series 650 V 20 A low loss
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USD 3.0239
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STGW60H65DF


IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
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USD 3.0345
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 650 V2.1 V20 V120 A 360 W TO - 247TubeSiThrough Hole360 W  Stgw60h65df
STGW60V60F


IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
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USD 3.0563
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Single600 V2.35 V+/- 20 V80 A 375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw60v60f
STGW40N120KD


IGBT Transistors 40 A - 1200 V SC rugged IGBT
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USD 3.0673
Multiples of: 30

 1200 V2.8 V+/- 25 V80 A100 nA240 W TO - 247Tube Through Hole - 55 C+ 125 CStgw40n120kd
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