About IGBT Transistors

Rohm IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGT8BM65DTL


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 7265
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USD 0.5375
Multiples of: 1

 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 252 - 3ReelSiSmd/Smt62 W- 40 C+ 175 CRgt8bm65d
RGT16BM65DTL


IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 5981
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USD 1.0692
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 252 - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
RGPZ10BM40FHTL


IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
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ROHM 4850
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USD 1.1572
Multiples of: 1

Single460 V1.6 V10 V20 A15 uA Aec - Q101TO - 252 - 3Cut Tape Smd/Smt107 W- 40 C+ 175 CRgp
RGPR30BM40HRTL


IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT
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ROHM 4670
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USD 0.9727
Multiples of: 1

Single430 V1.6 V10 V30 A0.6 mA Aec - Q101TO - 252 - 3Cut Tape Smd/Smt125 W- 40 C+ 175 C 
RGT30TM65DGC9


IGBT Trench Field Stop 650 V 14 A 32 W Through Hole TO-220NFM
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ROHM 3778
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USD 1.449
Multiples of: 1

Single650 V1.65 V30 V14 A200 nA  TO - 220 - 3TubeSiThrough Hole32 W- 40 C+ 175 C 
RGT40NS65DGTL


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1935
Ships to you
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USD 1.3957
Multiples of: 1

 650 V1.65 V+/- 30 V40 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt161 W- 40 C+ 175 CRgt40ns65d
RGT16NS65DGTL


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1847
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USD 0.8407
Multiples of: 1

 650 V1.65 V+/- 30 V16 A+/- 200 nA   ReelSiSmd/Smt94 W- 40 C+ 175 CRgt16ns65d
RGC80TSX8RGC11


IGBT Transistors REVERSE CONDUCTING IGBT
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ROHM 1107
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USD 5.612
Multiples of: 1

Single1.8 kV2.2 V30 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 40 C+ 175 C 
RGT40NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 970
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USD 2.1749
Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 262 - 3TubeSiThrough Hole161 W- 40 C+ 175 C 
RGT30NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 967
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USD 1.4375
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt133 W- 40 C+ 175 C 
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