About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

IGW100N60H3FKSA1

IGBT Transistors INDUSTRY 14

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Infineon

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May 2025

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USD 6.3079

Multiples of: 1

IRGP4063D1PBF

Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube

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Infineon

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USD 6.3633

Multiples of: 25

600 V

2.05 V

20 V

100 A

100 nA

TO - 247 - 3

Tube

Through Hole

330 W

APT36GA60BD15

IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi

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Microchip

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USD 6.417

Multiples of: 1

290 W

POWER MOS 8®, PT

IRG8P60N120KDPBF

International Rectifier IGBT Transistors 1200V IGBT GEN8

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Infineon

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USD 6.4317

Multiples of: 1

Single

1200 V

1.7 V

30 V

100 A

400 nA

420 W

TO - 247AC - 3

Tube

Through Hole

420 W

- 40 C

+ 150 C

APT27GA90BD15

IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi

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Microchip

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23	1	2	3	4	5	6	7

USD 6.468

Multiples of: 1

Single

900 V

2.5 V

30 V

48 A

100 nA

TO - 247 - 3

Tube

Through Hole

223 W

- 55 C

+ 150 C

STGWA80H65FB

STMicroelectronics IGBT Transistors

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STMicroelectronics

Availability : 0
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USD 6.483

Multiples of: 1

Single

650 V

1.6 V

20 V

120 A

250 nA

TO - 247 - 3

Tube

Through Hole

469 W

- 55 C

+ 175 C

600 - 650V Igbts

STGWT80H65FB

STMicroelectronics IGBT Transistors

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STMicroelectronics

Availability : 0
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May 2025

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USD 6.483

Multiples of: 1

Single

650 V

1.6 V

20 V

120 A

250 nA

TO - 3P

Tube

Through Hole

469 W

- 55 C

+ 175 C

600 - 650V Igbts

STGW80V60F

STMicroelectronics IGBT Transistors

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STMicroelectronics

Availability : 0
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May 2025

May 2025
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USD 6.483

Multiples of: 1

Single

600 V

1.85 V

20 V

120 A

250 nA

TO - 247 - 3

Tube

Through Hole

469 W

- 55 C

+ 175 C

600 - 650V Igbts

IXGH24N120C3

IGBT Transistors 48 Amps 1200V

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IXYS

Availability : 0
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May 2025

May 2025
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USD 6.4933

Multiples of: 1

Single

1200 V

3.6 V

20 V

48 A

100 nA

TO - 247AD - 3

Tube

Through Hole

250 W

- 55 C

+ 150 C

Ixgh24n120

IKY40N120CH3XKSA1

IGBT Transistors INDUSTRY 14

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
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May 2025

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USD 6.4959

Multiples of: 1

Single

1200 V

2 V

20 V

80 A

100 nA

TO 247 - 4 - 2

Tube

Through Hole

500 W

- 40 C

+ 175 C

IXYA50N65C3

IGBT Transistors 650V/130A XPT C3-Class TO-263

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

May 2025

May 2025
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USD 6.538

Multiples of: 1

Single

650 V

2.1 V

30 V

130 A

100 nA

TO - 263 - 2

Tube

Smd/Smt

600 W

- 55 C

+ 175 C

Ixya50n65

IRGP6690D-EPBF

International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
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May 2025

May 2025
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USD 6.5664

Multiples of: 1

Single

600 V

1.65 V

20 V

140 A

200 nA

TO - 247AD - 3

Tube

Through Hole

483 W

- 40 C

+ 175 C

IXGP48N60A3

IGBT Transistors Disc IGBT PT-Low Frequency TO-220AB/FP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
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May 2025

May 2025
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USD 6.5811

Multiples of: 1

Single

600 V

1.18 V

20 V

120 A

100 nA

TO - 220 - 3

Through Hole

300 W

- 55 C

+ 150 C

IXXH50N60B3D1

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

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IXYS

Availability : 0
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May 2025

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USD 6.6478

Multiples of: 1

600 V

1.55 V

20 V

120 A

100 nA

TO - 247 - 3

Tube

Through Hole

600 W

- 55 C

+ 175 C

Ixxh50n60

IRG8P50N120KDPBF

International Rectifier IGBT Transistors 1200V IGBT GEN8

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
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May 2025

May 2025
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23	1	2	3	4	5	6	7

USD 6.6924

Multiples of: 25

Single

1200 V

1.7 V

30 V

80 A

300 nA

350 W

TO - 247AC - 3

Tube

Through Hole

350 W

- 40 C

+ 150 C

IXYH24N90C3D1

IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode

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IXYS

Availability : 0
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May 2025

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22	25	26	27	28	29	30	31
23	1	2	3	4	5	6	7

USD 6.7522

Multiples of: 1

Single

900 V

2.7 V

20 V

44 A

100 nA

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Planar

IXXP50N60B3

IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
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23	1	2	3	4	5	6	7

USD 6.7796

Multiples of: 1

Single

600 V

1.55 V

20 V

120 A

100 nA

TO - 220 - 3

Through Hole

600 W

- 55 C

+ 175 C

STGYA120M65DF2AG

IGBT Transistors Automotive-grade trench gate field-stop IGBT M series 650 V 120 A low loss in a Max247 long leads package

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0
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May 2025

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22	25	26	27	28	29	30	31
23	1	2	3	4	5	6	7

USD 6.794

Multiples of: 1

Single

650 V

1.65 V

20 V

160 A

250 uA

Aec - Q101

MAX - 247 - 3

Through Hole

625 W

- 55 C

+ 175 C

Stgya120m65df2ag

STGW40S120DF3

STMicroelectronics IGBT Transistors

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0
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May 2025

May 2025
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USD 6.8095

Multiples of: 1

Single

1.2 kV

1.65 V

+/- 20 V

80 A

250 nA

TO 247 - 3

Tube

Through Hole

468 W

- 55 C

+ 175 C

900 - 1300V Igbts

APT44GA60BD30

IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 0
Ship by 6 to 16 Weeks

May 2025