About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP3HF60HD


IGBT Transistors 4.5 A, 600 V very fast IGBT with Ultrafast diode
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STMicroelectronics Availability : 1919
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USD 0.5947

Multiples of: 1

          Si    Stgp3hf60hd
STGP7H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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STMicroelectronics Availability : 0
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USD 0.5791

Multiples of: 1

Single600 V1.95 V+/- 20 V14 A250 nA  TO - 220 - 3TubeSiThrough Hole88 W- 55 C+ 175 CStgp7h60df
STGB5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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STMicroelectronics Availability : 0
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USD 0.5812

Multiples of: 1

Single600 V1.5 V+/- 20 V10 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgb5h60df
NGD15N41ACLT4G


ON Semiconductor IGBT Transistors IGNITION IGBT 15 A, 410 V
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ON Semiconductor Availability : 0
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USD 0.5819

Multiples of: 1

        TO - 252 - 3ReelSiSmd/Smt   Ngd15n41a
IKD04N60RAATMA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 0.5886

Multiples of: 2500

Single600 V1.65 V+/- 20 V8 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt75 W- 40 C+ 175 CRc
FGD4536TM


IGBT Transistors 360V PDP IGBT
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ON Semiconductor Availability : 0
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USD 0.589

Multiples of: 1

Single360 V1.59 V30 V50 A400 nA125 W DPAKReelSiSmd/Smt125 W  Fgd4536
NGD18N40ACLBT4G


IGBT Transistors 400V 18A IGBT CLAMP
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Littelfuse Availability : 0
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USD 0.5898

Multiples of: 1

 430 V 18 V15 A   DPAKCut TapeSiThrough Hole115 W- 55 C+ 175 CNgd18n40a
FGD3N60UNDF


Fairchild Semiconductor IGBT Transistors 600V, 3A Short Circuit Rated IGBT
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ON Semiconductor Availability : 0
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USD 0.5901

Multiples of: 2500

Single600 V2.4 V20 V6 A10 uA  TO - 252 - 3ReelSiSmd/Smt60 W- 55 C+ 150 CFgd3n60
STGB10H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 0.5901

Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA  D2PAKReelSiSmd/Smt115 W- 55 C+ 175 C600 - 650V Igbts
IKZ50N65NH5XKSA1


Transistor: IGBT; 650V; 54A; 136W; TO247-4; Series: H5
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Infineon Availability : 0
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USD 0.5913

Multiples of: 3

      136 W   Trenchstop 5    H5
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