About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
Hot IKW40N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 1394
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USD 3.2876

Multiples of: 1

Single1200 V2.05 V+/- 20 V80 A600 nA483 W TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CIkw40n120
IKW30N60TFKSA1


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon Availability : 1332
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USD 2.4495

Multiples of: 1

Single600 V1.9 V20 V45 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 175 CXkw30n60
IKW30N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon Availability : 1308
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USD 2.139

Multiples of: 1

Single650 V1.35 V+/- 2062 A100 nA  TO - 247 - 3TubeSiThrough Hole188 W- 40 C+ 175 CTrenchstop 5 S5
IMBG120R090M1HXTMA1


N-Channel 1.2kV 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
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Infineon Availability : 1284
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USD 5.1405

Multiples of: 1

        TO - 263 - 8 , D²PAK (7 Leads + Tab) , TO - 263CATape And ReelSic (Silicon Carbide Junction Transistor)    Coolsic
IKW40N120T2FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon Availability : 1265
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USD 5.2785

Multiples of: 1

Single1200 V1.75 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 175 CXkw40n120
IRG4PSH71KPBF


IGBT Transistors 1200V UltraFast 4-20kHz
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Infineon Availability : 1264
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USD 11

Multiples of: 1

Single1.2 kV3.9 V+/- 20 V78 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
Hot NGTB40N65FL2WG


ON Semiconductor IGBT Transistors 650V40A FAST IGBT FSII T
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ON Semiconductor Availability : 1256
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USD 2.7609

Multiples of: 1

Single650 V2.1 V20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
IRG4RC10UTRPBF


IGBT Transistors 600V UltraFast 8-60kHz
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Infineon Availability : 1233
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USD 0.6588

Multiples of: 1

Single600 V2.6 V+/- 20 V8.5 A 38 W DPAKReelSiSmd/Smt38 W- 55 C  
IKW50N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 50A
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Infineon Availability : 1230
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USD 2.4487

Multiples of: 1

Single600 V1.5 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
IKW25T120


IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon Availability : 155
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USD 4.1032

Multiples of: 1

Single1200 V1.7 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole190 W- 40 C+ 150 CIkw25t120
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