VS-GT90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A FEATURES Trench IGBT technology Square RBSOA Positive V temperature coefficient CE(on) Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline SOT-227 UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS BENEFITS V 1200 V CES Designed for increased operating efficiency in power I DC 106 A at 90 C C conversion: UPS, SMPS, welding, induction heating V typical at 75 A, 25 C 2.17 V CE(on) Easy to assemble and parallel Speed 8 kHz to 30 kHz Direct mounting on heatsink Package SOT-227 Plug-in compatible with other SOT-227 packages Circuit configuration Single switch no diode Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 169 C Continuous collector current I C T = 90 C 106 C A Pulsed collector current I T = 150 C, t = 6 ms, V = 15 V 350 CM J p GE Clamped inductive load current I 250 LM Gate to emitter voltage V 20 V GE T = 25 C 781 C Power dissipation P W D T = 90 C 375 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 4 mA 1200 - - BR(CES) GE C V = 15 V, I = 75 A - 2.17 2.60 GE C Collector to emitter voltage V V = 15 V, I = 75 A, T = 125 C - 2.44 - CE(on) GE C J V V = 15 V, I = 75 A, T = 150 C - 2.49 - GE C J V = V , I = 4 mA 4.6 5.9 7.6 CE GE C Gate threshold voltage V GE(th) V = V , I = 4 mA, T = 125 C - 4.63 - CE GE C J Temperature coefficient of threshold voltage V /T V = V , I = 4 mA (25 C to 125 C) - -13 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 0.9 100 GE CE A Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 750 - CES GE CE J V = 0 V, V = 1200 V, T = 150 C - 2.7 - mA GE CE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE Revision: 27-Jul-2021 Document Number: 96863 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GT90SA120U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 307 - g Gate to emitter charge (turn-on) Q I = 90 A, V = 960 V, V = 15 V -33- nC ge C CC GE Gate to collector charge (turn-on) Q - 160 - gc Turn-on switching loss E -2.15 - on Turn-off switching loss E -2.59 - mJ off Total switching loss E -4.74 - tot I = 75 A, V = 600 V, C CC Turn-on delay time t V = 15 V, R = 5 , -36- d(on) GE g L = 500 H, T = 25 C J Rise time t -26- r ns Turn-off delay time t - 116 - Energy losses d(off) include tail and Fall time t -82- f diode recovery Turn-on switching loss E -2.23 - on Diode used HFA16PB120 Turn-off switching loss E -3.87 - mJ off Total switching loss E -6.1 - tot I = 75 A, V = 600 V, C CC Turn-on delay time t V = 15 V, R = 5 , -34- d(on) GE g L = 500 H, T = 125 C J Rise time t -27- r ns Turn-off delay time t - 123 - d(off) Fall time t - 147 - f T = 150 C, I = 250, R = 4.7 , V = 15 V to 0 V, J C g GE Reverse bias safe operating area RBSOA Fullsquare V = 800 V, V = 1200 V, L = 500 H CC P THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -40 - 150 C J Stg Junction to case R - - 0.16 thJC C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 27-Jul-2021 Document Number: 96863 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000