About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
XNS40N60T


IGBTs Field Stop 600V 40A TO-247 RoHS
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XINER Availability : 0
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USD 1.5206
Multiples of: 1

                
STGB20N45LZAG


IGBT Transistors Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ
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STMicroelectronics Availability : 0
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USD 1.5229
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 450 V1.25 V16 V25 A625 uA Aec - Q101D2PAK - 3  Smd/Smt150 W- 55 C+ 175 CStgb20n45lzag
IRG4BC20SD-SPBF


International Rectifier IGBT Transistors 600V DC-1kHz
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Infineon Availability : 0
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USD 1.525
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Single600 V1.4 V+/- 20 V19 A   D - PAK - 3TubeSiSmd/Smt60 W- 55 C  
STGP6M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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STMicroelectronics Availability : 0
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USD 1.528
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Single650 V1.55 V+/- 20 V12 A+/- 250 uA  TO - 220 - 3 SiThrough Hole88 W- 55 C+ 175 CStgp6m65df2
NGB8206ANTF4G


ON Semiconductor IGBT Transistors IGBT 20A 350V N-CHANNEL
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ON Semiconductor Availability : 0
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USD 1.5296
Multiples of: 284

 390 V 15 V20 A350 uA  TO - 263 - 3ReelSiSmd/Smt150 W- 55 C+ 175 CNgb8206a
IRG4PC30WPBF


IGBT Transistors 600V Warp 60-150kHz
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Infineon Availability : 0
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USD 1.5305
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Single600 V2.7 V+/- 20 V23 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C  
STGW30H60DLFB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 1.5386
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        TO - 247 - 3TubeSiThrough Hole   600 - 650V Igbts
RGT50TM65DGC9


IGBT Trench Field Stop 650 V 21 A 47 W Through Hole TO-220NFM
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ROHM Availability : 0
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USD 1.5386
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Single650 V1.65 V30 V30 A200 nA  TO - 263 - 3TubeSiSmd/Smt133 W- 40 C+ 175 C 
IRGS4715DPBF


Transistor: IGBT; 650V; 21A; 100W; D2PAK
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Infineon Availability : 0
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USD 1.5399
Multiples of: 291

      100 W         
STGF30H60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 0
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USD 1.5421
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Single600 V2.4 V20 V60 A250 nA37 W TO - 220 - 3 FPTubeSiThrough Hole37 W- 40 C+ 175 CStgf30h60df
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