About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH60N60UFDTU_F085


Fairchild Semiconductor IGBT Transistors N-Ch 60A 600V FS IGBT
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ON Semiconductor Availability : 0
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USD 3.3875

Multiples of: 1

Single600 V1.8 V+/- 20 V120 A+/- 400 nA  TO - 247 - 3TubeSiThrough Hole298 W- 55 C+ 150 CFgh60n60uf_F085
IGZ75N65H5


IGBT Transistors INDUSTRY 14
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Infineon Availability : 0
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USD 3.3875

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STGW15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics Availability : 0
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USD 3.3978

Multiples of: 1

Single1200 V2.1 V20 V30 A250 nA259 W TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 CStgw15h120df2
IRG4PH40UPBF


International Rectifier IGBT Transistors 1200V UltraFast 5-40kHz
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USD 3.4063

Multiples of: 1

Single1.2 kV3.5 V+/- 20 V30 A 160 W TO - 247TubeSiThrough Hole160 W- 55 C  
STGWA40S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 3.4091

Multiples of: 30

Single1.2 kV1.65 V+/- 20 V80 A250 nA  TO 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
FGH60N60SFDTU-F085


Trans IGBT Chip N-CH 600V 120A Automotive 3-Pin(3+Tab) TO-247AB Rail
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ON Semiconductor Availability : 0
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USD 3.4185

Multiples of: 1

                
IKP30N65F5XKSA1


IGBT Transistors INDUSTRY 14
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USD 3.4254

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         Tube      
IXSH24N60


IGBT Transistors 48 Amps 600V 2.2 Rds
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IXYS Availability : 0
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USD 3.4404

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Single600 V +/- 20 V    TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh24n60
IRG4PC50UDPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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USD 3.4473

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Single600 V2 V+/- 20 V55 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C  
FGA180N33ATTU


Trans IGBT Chip N-CH 330V 180A 3-Pin(3+Tab) TO-3PN Tube
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USD 3.4509

Multiples of: 1

Single        Rail/Tube      
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