About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXDA20N120AS


IGBT Transistors 20 Amps 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 3.8025
Multiples of: 1

Single1200 V2.8 V20 V    TO - 263 - 3Cut TapeSiSmd/Smt - 55 C+ 150 CIxda20n120as
AFGHL75T65SQ


IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-3
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ON Semiconductor Availability : 0
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USD 3.8039
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        TO - 247 - 3 VARIANTTube     Automotive, Aec - Q101
FGH40T100SMD_F155


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor Availability : 0
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USD 3.8048
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         BulkSi     
RGS80TS65HRC11


IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N
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ROHM Availability : 0
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USD 3.8065
Multiples of: 1

Single650 V1.65 V30 V73 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole272 W- 40 C+ 175 C 
IRGP6650D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.8109
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Single600 V1.65 V20 V80 A100 nA  TO - 247AD - 3TubeSiThrough Hole306 W- 40 C+ 175 C 
IXSQ10N60B2D1


IGBT Transistors 10 Amps 600V 2.5 Rds
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IXYS Availability : 0
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USD 3.811
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA100 W TO - 3P - 3Tube Through Hole - 55 C+ 150 CIxsq10n60
IRG4PH50KPBF


IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
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Infineon Availability : 0
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USD 3.8189
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V45 A   TO - 247 - 3Tube Through Hole200 W- 55 C+ 150 C 
IRG7PH35UD1-EP


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 3.822
Multiples of: 1

 1.2 kV2.2 V 50 A   TO - 247 - 3TubeSiThrough Hole179 W   
SPT40N120T1BT8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 0
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USD 3.8228
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IXYH20N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 0
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USD 3.8314
Multiples of: 1

Single1200 V4 V30 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole278 W- 55 C+ 175 CIxyh20n120
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