About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTG40N60A4


Transistor: IGBT; 600V; 63A; 625W; TO247
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USD 4.6307
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      625 W         
IKY40N120CS6XKSA1


IGBT Transistors INDUSTRY 14
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USD 4.6537
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Single1200 V1.85 V20 V80 A600 nA  TO - 247 - 4TubeSiThrough Hole500 W- 40 C+ 175 CIgbt6
IRGP4069DPBF


Transistor: IGBT; 600V; 76A; 268W; TO247-3
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USD 4.6749
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Single600 V1.85 V+/- 20 V76 A 268 W TO - 247TubeSiThrough Hole268 W- 55 C  
IXDP35N60B


IXYS IGBT Transistors 35 Amps 600V
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USD 4.6904
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Single600 V2.1 V+/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CIxdp35n60b
FGH75N60UFTU


IGBT Transistors N-CH / 600V 75A FS Planar
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USD 4.7014
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Single600 V +/- 20 V    TO - 247AB - 3Tube Through Hole - 55 C+ 150 CFgh75n60s
IXDH35N60B


IXYS IGBT Transistors 35 Amps 600V
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IXYS Availability : 0
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USD 4.732
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Single600 V2.1 V+/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh35n60b
IRGP4068D-EPBF


IGBT Transistors 600V UltraFast Trnch w/Ultra-Low VF Diode
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USD 4.7334
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Single600 V2.14 V+/- 20 V96 A 330 W TO - 247ADTubeSiThrough Hole330 W- 55 C  
IXA27IF1200HJ


IGBT Transistors XPT IGBT Copack
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IXYS Availability : 0
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USD 4.7416
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Single1200 V1.8 V20 V43 A500 nA  ISOPLUS 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxa27if1200hj
IRGP4069-EPBF


IGBT Transistors 600V 76.000A TO-247
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USD 4.7424
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 600 V1.85 V 76 A   TO - 247 - 3Tube Through Hole268 W   
HGTG20N60B3D


Transistor: IGBT; 600V; 20A; 165W; TO247
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USD 4.75
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      165 W         
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