About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4266PBF


IGBT Transistors 650V Low VCEon Trench IGBT
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Infineon Availability : 0
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USD 5.8088
Multiples of: 1

 650 V2.1 V20 V140 A100 nA450 W TO - 247TubeSiThrough Hole450 W   
IRG4PH50UD


Transistor: IGBT; 1200V; 45A; 200W; TO247-3
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Infineon Availability : 0
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USD 5.8126
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      200 W         
APT70GR65B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 5.8233
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      595 W   NPT, POWER MOS 8®     
IXGR60N60C3D1


IGBT Transistors 60 Amps 600V
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IXYS Availability : 0
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USD 5.8339
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Single600 V2.5 V20 V75 A100 nA  Isoplus247TubeSiThrough Hole170 W- 55 C+ 150 CIxgr60n60
STGW60H65F


IGBT Transistors 60A 650V FST IGBT Very High Switching
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STMicroelectronics Availability : 0
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USD 5.8426
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  1.9 V+/- 20 V120 A100 nA360 W TO - 247Tube Through Hole - 55 C+ 150 CStgw60h65f
IXGT10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS Availability : 0
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USD 5.8605
Multiples of: 16

Single1.7 kV4.5 V20 V10 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxgt10n170
IRGP4063D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 48A 5uS 1.65V VCE
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USD 5.8611
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 600 V2.05 V20 V96 A100 nA  TO - 247 - 3TubeSiThrough Hole330 W   
IXXH40N65C4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 5.8675
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Single       TO - 247 - 3Tube Through Hole455 W- 55 C+ 175 C 
IXYA20N120C3HV


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS Availability : 0
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USD 5.8675
Multiples of: 1

Single1.2 kV3.4 V20 V40 A100 nA  TO - 263HV - 2 SiSmd/Smt278 W- 55 C+ 175 C 
IRG7PH44K10D-EPBF


Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247AD Tube
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Infineon Availability : 0
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USD 5.8731
Multiples of: 77

      320 W         
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