T O-247 AP70GR65B APT70GR65B 650V, 70A, V = 1.9V Typical CE(on) Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT family of products is the newest generation of IGBTs 3 D PA K optimized for outstanding ruggedness and best trade-off between conduction and switching losses. (S) C G E Features G C Low Saturation Voltage Short Circuit Withstand Rated E Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 650 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 134 C1 C I Continuous Collector Current T = 110C 65 A C2 C 1 I Pulsed Collector Current 260 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 595 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 250uA) 650 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 70A, T = 25C) 1.9 2.4 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 70A, T = 125C) 2.4 GE C j Collector-Emitter On Voltage (V = 15V, I = 140A, T = 25C) 2.6 GE C j 2 Collector Cut-off Current (V = 650V, V = 0V, T = 25C) 10 250 CE GE j I A CES 2 Collector Cut-off Current (V = 650V, V = 0V, T = 125C) 100 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT70GR65B Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 4250 ies C Output Capacitance V = 0V, V = 25V 847 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 415 res V Gate to Emitter Plateau Voltage Gate Charge 7.0 V GEP 3 Q Total Gate Charge V = 15V 226 305 g GE Q Gate-Emitter Charge 26 35 V = 325V nC ge CE Q Gate- Collector Charge 104 140 I = 70A gc C t Turn-On Delay Time Inductive Switching (25C) 19 d(on) t Current Rise Time 45 V = 433V r CC ns t Turn-Off Delay Time 170 V = 15V d(off) GE t Current Fall Time 67 I = 70A f C 5 4 E Turn-On Switching Energy 1505 2260 R = 4.3 on2 G J 6 E Turn-Off Switching Energy 1460 1970 T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 19 d(on) t Current Rise Time V = 433V 45 r CC ns t Turn-Off Delay Time V = 15V 190 d(off) GE t Current Fall Time I = 70A 74 f C 5 4 E Turn-On Switching Energy R = 4.3 1560 2340 on2 G J 6 E Turn-Off Switching Energy T = +125C 1720 2580 off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance .21 JC C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz W Package Weight T 6.2 g 10 in-lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 6.2 Nm 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the energy loss at turn-on and includes the charge stored in the freewheeling diode. on2 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 0.05 t 1 t 0.1 Duty Factor D = / 2 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -2 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6415 Rev A 5-2013 Z , THERMAL IMPEDANCE (C/W) JC P DM