About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH24N170C


IGBT Transistors 1700V/58A High Volt
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IXYS Availability : 0
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USD 8.9539
Multiples of: 1

Single1700 V3.5 V20 V58 A25 uA  TO - 247AD - 3 SiThrough Hole500 W- 55 C+ 175 CHigh Voltage
IXGT6N170AHV


IGBT Transistors IGBT NPT-HI VOLTAGE
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IXYS Availability : 0
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USD 8.9663
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         TubeSi    High Voltage
IXYH75N120B4


Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247
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IXYS Availability : 0
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USD 8.9777
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      1.15 kW   Genx4, XPT     
IRG7PSH50UDPBF


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 9.009
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Single1.2 kV2 V+/- 30 V116 A+/- 200 nA  TO - 274AA - 3TubeSiThrough Hole462 W- 55 C+ 150 C 
IXYH30N120C3


IGBT Transistors 1200V XPT GenX3 IGBT
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IXYS Availability : 0
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USD 9.0394
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Single1200 V3.7 V30 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh30n120
IXA20RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 0
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USD 9.0416
Multiples of: 1

          Si    Ixa20rg1200dhglb
IRGP4066D-EPBF


International Rectifier IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 0
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USD 9.0663
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Single600 V2.1 V+/- 20 V140 A 454 W TO - 247ADTubeSiThrough Hole454 W- 55 C  
IRGP50B60PD1PBF


IGBT Transistors 600V Warp2 150kHz
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Infineon Availability : 0
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USD 9.0788
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Single600 V2.35 V+/- 20 V75 A 390 W TO - 247TubeSiThrough Hole390 W- 55 C  
APT25GR120SD15


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 9.0875
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      521 W   NPT, POWER MOS 8®     
IXBT6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS Availability : 0
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USD 9.152
Multiples of: 1

Single1.7 kV2.84 V+/- 20 V12 A100 nA  TO - 268 - 3TubeSiSmd/Smt75 W- 55 C+ 150 CIxbt6n170
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