IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low V Trench IGBT Technology CE (ON) V = 600V CES Low Switching Losses Maximum Junction Temperature 175 C I = 75A C(Nominal) 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of The Parts Tested for I LM Positive V Temperature Coefficient CE (ON) E V typ. = 1.70V CE(on) Tight Parameter Distribution n-channel Lead Free Package C Benefits C High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to E E C C Low V and Low Switching Losses CE (ON) G G Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD IRGP4066DPbF IRGP4066D-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C I NOMINAL Nominal Current 75 I Pulse Collector Current, V = 15V 225 A CM GE I Clamped Inductive Load Current, V = 20V 300 LM GE I T = 25C Diode Continous Forward Current 140 F C I T = 100C Diode Continous Forward Current 90 F C Diode Maximum Forward Current I 300 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 454 W D C P T = 100C Maximum Power Dissipation 227 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.33 C/W JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 1.0 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 10/08/2010IRGP4066DPbF/IRGP4066D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100 A (BR)CES 600 V GE C V /T (BR)CES J Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 2.0mA (25C-175C) GE C 1.70 2.10 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 75A, V = 15V, T = 150C CE(on) C GE J = 75A, V = 15V, T = 175C 2.1 I C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C V /TJ V = V , I = 2.1mA (25C - 175C) GE(th) Threshold Voltage temp. coefficient -21 mV/C CE GE C gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 60s CE C I Collector-to-Emitter Leakage Current 1.0 100 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 175C 1040 GE CE J V Diode Forward Voltage Drop 2.23 3.0 V I = 75A FM F I = 75A, T = 175C 1.8 F J I Gate-to-Emitter Leakage Current 200 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 75A g Total Gate Charge (turn-on) 150 225 C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E Turn-On Switching Loss 2465 3360 I = 75A, V = 400V, V = 15V on C CC GE E = 10, L = 200 H, T = 25C Turn-Off Switching Loss 2155 3040 J R off G J E Total Switching Loss 4620 6400 Energy losses include tail & diode reverse recovery total t I = 75A, V = 400V, V = 15V Turn-On delay time 50 70 d(on) C CC GE t Rise time 70 90 ns R = 10, L = 200 H, T = 25C r G J t Turn-Off delay time 200 225 d(off) t Fall time 60 80 f E Turn-On Switching Loss 3870 I = 75A, V = 400V, V =15V on C CC GE E R =10, L=200H, T = 175C Turn-Off Switching Loss 2815 J off G J E Total Switching Loss 6685 Energy losses include tail & diode reverse recovery total t Turn-On delay time 50 I = 75A, V = 400V, V = 15V d(on) C CC GE t R = 10, L = 200 H Rise time 70 ns r G t Turn-Off delay time 240 T = 175C d(off) J t f Fall time 70 C Input Capacitance 4440 pF V = 0V ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 130 f = 1.0Mhz res T = 175C, I = 300A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp 600V CC Rg = 10, V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 470 J J t Diode Reverse Recovery Time 155 ns V = 400V, I = 75A rr CC F I V = 15V, Rg = 10, L = 60H Peak Reverse Recovery Current 27 A rr GE Notes: V = 80% (V ), V = 20V, L = 10H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com