PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Square RBSOA I = 50A NOMINAL 100% of the parts tested for I LM Positive V temperature co-efficient CE (ON) G T = 150C J(max) Ultra fast soft recovery co-pak diode Tight parameter distribution E V typ. = 1.7V CE(on) Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low V and low switching losses C CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E C G Applications U.P.S. Super-247 Welding Solar Inverter Induction Heating GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 1200 V V CES I T = 25C Continuous Collector Current (Silicon Limited) 116 C C I T = 100C Continuous Collector Current (Silicon Limited) 70 C C Nominal Current 50 I NOMINAL I Pulse Collector Current, V = 15V 150 A CM GE I Clamped Inductive Load Current, V = 20V 200 LM GE I T = 25C Diode Continous Forward Current 116 F C Diode Continous Forward Current 70 I T = 100C F C Diode Maximum Forward Current I 200 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 462 W D C P T = 100C Maximum Power Dissipation 185 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.27 JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 0.37 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 07/28/2010IRG7PSH50UDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 100A Collector-to-Emitter Breakdown Voltage 1200 V V (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 1.0 V/C V = 0V, I = 1.0mA (25C-150C) (BR)CES J GE C V I = 50A, V = 15V, T = 25C Collector-to-Emitter Saturation Voltage 1.7 2.0 CE(on) C GE J 2.0 V I = 50A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 2.0mA GE(th) CE GE C V / TJ V = V , I = 1.0mA (25C - 150C) GE(th) Threshold Voltage temp. coefficient -17 mV/C CE GE C gfe Forward Transconductance 55 S V = 50V, I = 50A, PW = 30s CE C I V = 0V, V = 1200V Collector-to-Emitter Leakage Current 2.0 100 A CES GE CE 3700 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 3.0 3.9 V I = 50A FM F I = 50A, T = 150C 2.7 F J I Gate-to-Emitter Leakage Current 200 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 290 440 I = 50A g C = 15V Q Gate-to-Emitter Charge (turn-on) 40 60 nC V ge GE Q Gate-to-Collector Charge (turn-on) 110 170 V = 600V gc CC E I = 50A, V = 600V, V = 15V Turn-On Switching Loss 3600 4600 on C CC GE E Turn-Off Switching Loss 2200 3200 J R = 5.0 , L = 200H,T = 25C off G J E Total Switching Loss 5800 7800 Energy losses include tail & diode reverse recovery total t Turn-On delay time 35 55 d(on) t Rise time 4060ns r t Turn-Off delay time 430 500 d(off) t Fall time 45 65 f E Turn-On Switching Loss 5080 I = 50A, V = 600V, V =15V on C CC GE E R =5.0 , L=200H, T = 150C Turn-Off Switching Loss 3370 J off G J E Total Switching Loss 8450 Energy losses include tail & diode reverse recovery total t Turn-On delay time 30 d(on) t Rise time 40 ns r t Turn-Off delay time 480 d(off) t Fall time 170 f = 0V C Input Capacitance 6000 pF V ies GE C Output Capacitance 300 V = 30V oes CC C Reverse Transfer Capacitance 130 f = 1.0Mhz res T = 150C, I = 200A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 5.0 , V = +20V to 0V GE Erec Reverse Recovery Energy of the Diode 1510 J T = 150C J t Diode Reverse Recovery Time 190 ns V = 600V, I = 5.0A rr CC F Rg = 5.0 , L =1.0mH I Peak Reverse Recovery Current 5760 A rr Notes: V = 80% (V ), V = 20V, L = 200H, R = 5.0 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at 2 www.irf.com