About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH24N120C3H1


IGBT Transistors High Frequency Range 40khz C-IGBT w/Diode
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 9.4531
Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh24n120
APT15GN120SDQ1G


IGBT Transistors FG, IGBT, 1200V, TO-268, RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 9.464
Multiples of: 1

      195 W   Field Stop     
QP12W05S-37A


IGBT Through Hole RoHS
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MORNSUN Availability : 0
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USD 9.5143
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IXXH75N60C3


IGBT Transistors XPT 600V IGBT GenX3 Power Device
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IXYS Availability : 0
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USD 9.5211
Multiples of: 1

        TO - 247 - 3TubeSiThrough Hole   Ixxh75n60
IRG4PSC71KDPBF


IGBT Transistors 600V UltraFast 8-25kHz
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Infineon Availability : 0
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USD 9.5603
Multiples of: 1

Single600 V2.3 V+/- 20 V85 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
IXGX72N60C3H1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A
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IXYS Availability : 0
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USD 9.5946
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         TubeSi    Ixgx72n60
STGW40H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics Availability : 0
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USD 9.6377
Multiples of: 1

Single1200 V2.1 V20 V80 A250 nA468 W TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 CStgw40h120f2
IXGX72N60A3H1


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 9.6731
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 600 V1.35 V20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgx72n60
IXBH16N170A


IGBT Transistors 1700V 16A
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IXYS Availability : 0
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USD 9.685
Multiples of: 1

Single1700 V 20 V    TO - 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
IRG8P60N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 9.7625
Multiples of: 1

Single1200 V1.7 V30 V100 A400 nA  TO - 247AD - 3TubeSiThrough Hole420 W- 40 C+ 150 C 
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