IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 1200V CES C I = 60A, T =100C C C t 10s, T = 150C SC J(max) E G E C C G G E V typ. = 1.7V IC = 40A CE(ON) IRG8P60N120KDPbF IRG8P60N120KDEPbF n-channel TO247AC TO247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Benchmark Low V High Efficiency in a Motor Drive Applications CE(ON) 10 s Short Circuit SOA Increases margin for short circuit protection scheme Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE(ON) Square RBSOA and high I rating Rugged Transient Performance LM- Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG8P60N120KDPbF TO-247AC Tube 25 IRG8P60N120KDPbF IRG8P60N120KD-EPbF TO-247AD Tube 25 IRG8P60N120KD-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current (Silicon Limited) 100 C C I T = 100C Continuous Collector Current 60 C C I Pulse Collector Current (see fig. 2) 120 CM I Clamped Inductive Load Current (see fig. 3) 160 A LM I T = 25C Diode Continuous Forward Current 50 F C I T = 100C Diode Continuous Forward Current 30 F C I Diode Maximum Forward Current 160 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 420 D C W T = 100C P Maximum Power Dissipation 170 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (IGBT) 0.3 R (IGBT) JC Thermal Resistance Junction-to-Case (Diode) 0.8 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 1.0 V/C V = 0V, I = 5.0mA (25C-150C) V /T GE C (BR)CES J 1.7 2.0 V I = 40A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 40A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 6.5 V V = V , I = 1.6mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -16 mV/C V = V , I = 1.6mA (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 22 S V = 50V, I = 40A, PW = 20s CE C 1.0 35 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES 1.2 mAV = 0V, V = 1200V, T = 150C GE CE J Gate-to-Emitter Leakage Current I 400 nA V = 30V GES GE 2.3 2.9 V I = 40A F V Diode Forward Voltage Drop F 2.5 I = 40A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 230 345 I = 40A g C Q Gate-to-Emitter Charge (turn-on) 15 25 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 140 210 V = 600V gc CC E Turn-On Switching Loss 2.8 on E Turn-Off Switching Loss 2.3 mJ off I = 40A, V = 600V, V =15V C CC GE E Total Switching Loss 5.1 total R = 5.0 , T = 25C G J t Turn-On delay time 40 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 240 d(off) t Fall time 110 f E Turn-On Switching Loss 4.4 on E Turn-Off Switching Loss 4.2 off mJ I = 40A, V = 600V, V =15V C CC GE E Total Switching Loss 8.6 total R = 5.0 , T = 150C G J t Turn-On delay time 40 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 310 d(off) t Fall time 110 f C Input Capacitance 3700 V = 0V ies GE pF V = 30V C Output Capacitance 215 oes CC f = 1.0Mhz C Reverse Transfer Capacitance 120 res T = 150C, I = 160A J C FULL SQUARE V = 960V, Vp 1200V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 1.8 mJ J V = 600V, I = 40A t Diode Reverse Recovery Time 210 ns CC F rr V = 15V, Rg = 5.0 I Peak Reverse Recovery Current 21 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 30, 2014