About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH40N120C3D1


IGBT Transistors 75Amps 1200V
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IXYS Availability : 0
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USD 10.1978
Multiples of: 1

 1.2 kV4.4 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 150 CIxgh40n120
APT64GA90B


IGBT Transistors FG, IGBT, 900V, TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 10.262
Multiples of: 1

      500 W   POWER MOS 8®, PT     
IXYX140N90C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 10.268
Multiples of: 30

        TO - 247PLUS - 3 SiThrough Hole   Planar
APT70GR120B2


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 10.3407
Multiples of: 30

         TubeSi     
GT60J323(Q)


Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(LH)
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Toshiba Availability : 0
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USD 10.4025
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Single   60 A         150 C 
ITF48IF1200HR


IGBT Transistors Disc IGBT XPT-GenX3 ISOPLUS247
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IXYS Availability : 0
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USD 10.4039
Multiples of: 1

         Tube      
IXYH8N250C


Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247
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IXYS Availability : 0
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USD 10.4311
Multiples of: 1

      280 W   XPT     
IRG4PC50UPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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Infineon Availability : 0
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USD 10.4409
Multiples of: 1

Single600 V2 V20 V55 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
SGF5N150UFTU


Fairchild Semiconductor IGBT Transistors 1500V 5A
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ON Semiconductor Availability : 0
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USD 10.4876
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Single1500 V4.7 V+/- 20 V10 A+/- 100 nA62.5 W TO - 3PF - 3TubeSiThrough Hole62.5 W- 55 C+ 150 CSgf5n150
IXYT20N120C3D1HV


IGBT Transistors Disc IGBT XPT-GenX3 TO-268AA
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IXYS Availability : 0
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USD 10.5261
Multiples of: 1

Single1.2 kV3.4 V20 V36 A100 nA  TO - 268HV - 2 SiSmd/Smt230 W- 55 C+ 150 C 
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