About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXR100N60B3H1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 15.074
Multiples of: 30

 600 V1.5 V20 V145 A100 nA  ISOPLUS 247 - 3TubeSiThrough Hole400 W- 55 C+ 150 CIxxr100n60
IXGK50N60B NRND


IXYS IGBT Transistors 75 Amps 600V 2.5 Rds
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IXYS Availability : 0
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USD 15.1018
Multiples of: 1

Single600 V +/- 20 V    TO - 264AA - 3Tube Through Hole - 55 C+ 150 CIxgk50n60
IXGX320N60A3


IGBT Transistors 320 Amps 600V
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IXYS Availability : 0
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USD 15.162
Multiples of: 1

Single600 V1.05 V20 V320 A400 nA  PLUS 247 - 3TubeSiThrough Hole1 kW- 55 C+ 150 CIxgx320n60
IXB80IF600NA


IGBT Transistors XPT Single IGBT
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IXYS Availability : 0
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USD 15.2716
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         Tube      
IXSK35N120AU1


IGBT Transistors 70 Amps 1200V 4 Rds
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IXYS Availability : 0
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USD 15.4562
Multiples of: 1

Single1200 V +/- 20 V    TO - 264AA - 3Tube Through Hole - 55 C+ 150 CIxsk35n120
APT40GP90BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 15.6446
Multiples of: 1

      543 W   POWER MOS 7®, PT     
IXXK160N65C4


IGBT Transistors 650V/290A Trench IGBT GenX4 XPT
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IXYS Availability : 0
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USD 15.6748
Multiples of: 25

         Tube      
IXGT32N170A


IGBT Transistors 72 Amps 1700 V 5.0 V Rds
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IXYS Availability : 0
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USD 15.7437
Multiples of: 1

Single1700 V4 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt32n170
IXGR50N60B


Discrete IGBT High Speed Serie
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IXYS Availability : 0
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USD 15.9521
Multiples of: 1

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IXXX140N65B4H1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 15.9526
Multiples of: 1

Single       PLUS247 - 3Tube Through Hole1200 W- 55 C+ 175 C 
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