About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD04N60RC2ATMA1


IGBT Trench Field Stop 600V 8A 36.6W Surface Mount PG-TO252-3
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Infineon Availability : 10346
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USD 0.3588

Multiples of: 1

Single600 V2.4 V20 V8 A   PG - TO252 - 3Reel , Cut Tape SMD/SMT36.6 W- 40 C+ 175 CTrenchstop RC
STGD6NC60HDT4


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 9700
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USD 0.6597

Multiples of: 2500

Single600 V1.9 V+/- 20 V 100 nA50 W DPAK - 3ReelSiSmd/Smt50 W- 55 C+ 150 CStgd6nc60hd
Hot IKW08T120


IGBT Transistors LOW LOSS DuoPack 1200V 8A
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Infineon Availability : 9229
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USD 1.6884

Multiples of: 1

Single1200 V2.2 V+/- 20 V16 A100 nA70 W TO - 247 - 3TubeSiThrough Hole70 W- 40 C+ 150 CIkw08t120
STGP19NC60KD


IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics Availability : 9213
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USD 0.7858

Multiples of: 1

Single600 V +/- 20 V  125 W TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 150 CStgp19nc60kd
STGWA60H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 8730
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USD 2.7326

Multiples of: 1

Single650 V2 V+/- 20 V80 A250 nA  TO - 247 - 3 SiThrough Hole375 W- 55 C+ 175 C600 - 650V Igbts
IGP15N60T


Transistor: IGBT; 600V; 23A; 130W; TO220-3
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Infineon Availability : 8670
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USD 0.836

Multiples of: 1

      130 W         
IKD10N60RF


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 8294
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USD 1.0825

Multiples of: 1

Single600 V2.2 V+/- 20 V20 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt150 W- 40 C+ 175 CRc
EG3112


MOS Drivers SOIC-8_150mil RoHS
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EG Availability : 8158
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USD 0.2904

Multiples of: 1

                
STGW39NC60VD


Transistor: IGBT; 600V; 40A; 250W; TO247-3
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STMicroelectronics Availability : 7957
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USD 1.6139

Multiples of: 1

      250 W         
STGF10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics Availability : 7760
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USD 0.9847

Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf10h60df
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