SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time 10 s G E Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Very soft, fast recovery anti-parallel Emitter Controlled PG-TO-220-3-1 PG-TO-220-3-31 / -111 Diode (TO-220AB) (FullPAK) Isolated TO-220, 2.5kV, 60s Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : SKP06N60 SKA06N60 Maximum Ratings Parameter Symbol Value Unit SKP06N60 SKA06N60 Collector-emitter voltage V 600 600 V C E I DC collector current A C T = 25C 12 9 C 6.9 5.0 T = 100C C Pulsed collector current, t limited by T I 24 24 p jmax C p ul s - Turn off safe operating area V 600V, T 150 C 24 24 CE j Diode forward current I F T = 25C 12 12 C T = 100C 6 6 C Diode pulsed current, t limited by T I 24 24 p jmax F p ul s Gate-emitter voltage V V 20 20 G E 2 Short circuit withstand time t s S C 10 10 V = 15V, V 600V, T 150 C GE CC j Power dissipation P W t o t 68 32 T = 25C C 3 Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220) M 0.6 0.5 Nm T , T Operating junction and storage temperature -55...+150 -55...+150 C j s t g Soldering temperature T 260 260 C s wavesoldering, 1.6 mm (0.063 in.) from case for 10s 2 Allowed number of short circuits: <1000 time between short circuits: >1s. 3 Maximum mounting processes: 3 2 Rev. 2.4 12.06.2013