About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
L2N7002SLLT1G


SOT-23 MOSFETs ROHS
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Leshan Availability : 19397672
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USD 0.004

Multiples of: 100

                   
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 3652050
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USD 0.0233

Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 2133030
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USD 0.0161

Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
STN1NK60Z


Transistor: N-MOSFET; unipolar; 600V; 189mA; 3.3W; SOT223
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STMicroelectronics Availability : 1982680
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USD 0.1898

Multiples of: 4000

            Supermesh      
Hot SIR626ADP-T1-RE3


MOSFET N-Channel 60-V
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Vishay Availability : 1555414
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USD 0.95

Multiples of: 1

165 A60 V1.75 mOhmsN - Channel 3.5 V- 55 C+ 150 C104 WSMD/SMT Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V55 nCEnhancement TrenchFET
2N7002NXAKR


MOSFET 60 V single N-channel Trench MOSFET
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Nexperia Availability : 1513907
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USD 0.0166

Multiples of: 1

300 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.33 nCEnhancement  
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon Availability : 1348300
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USD 0.0512

Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
BSS84PH6327XTSA2


Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; SOT23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 1338600
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USD 0.0408

Multiples of: 3000

   P Channel               
2N7002K


60V 300mA 350mW 2.2Ω@10V,300mA 1.6V@250uA 7.8pF@30V N Channel 25.5pF@30V 3.7nC@10V -50℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 1297211
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USD 0.0064

Multiples of: 50

                   
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) Availability : 97
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USD 0.0205

Multiples of: 20

340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
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