X-On Electronics has gained recognition as a prominent supplier of BSS84PH6327XTSA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS84PH6327XTSA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS84PH6327XTSA2 Infineon

BSS84PH6327XTSA2 electronic component of Infineon
BSS84PH6327XTSA2 Infineon
BSS84PH6327XTSA2 MOSFETs
BSS84PH6327XTSA2  Semiconductors

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See Product Specifications
Part No. BSS84PH6327XTSA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; SOT23
Datasheet: BSS84PH6327XTSA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0415 ea
Line Total: USD 124.5 
Availability - 1312410
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
90
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 93
Multiples : 1
93 : USD 0.247
400 : USD 0.1625
769 : USD 0.0845

20370
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0562
9000 : USD 0.0472
24000 : USD 0.0387
45000 : USD 0.0312

55290
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0403
9000 : USD 0.0393
12000 : USD 0.039
30000 : USD 0.0382
45000 : USD 0.0375

109137
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1771
10 : USD 0.099
100 : USD 0.0715
1000 : USD 0.055
3000 : USD 0.044
9000 : USD 0.0363
24000 : USD 0.0352
45000 : USD 0.0352

7900
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.392
5 : USD 0.2744
50 : USD 0.1526
100 : USD 0.1288
250 : USD 0.105

20370
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0562
9000 : USD 0.0472
24000 : USD 0.0387
45000 : USD 0.0312

1312410
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0415
9000 : USD 0.0347
24000 : USD 0.0287

68567
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 805
Multiples : 1
805 : USD 0.0807
882 : USD 0.0737
1000 : USD 0.0723
18000 : USD 0.049
36000 : USD 0.0487

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Svhc
Avalanche Single Pulse Energy Eas
Capacitance Ciss Typ
Current Idss Max
Current Temperature
Device Marking
External Depth
External Length / Height
External Width
Fall Time Tf
Full Power Rating Temperature
Junction Temperature Tj Max
Junction Temperature Tj Min
No. Of Transistors
On State Resistance @ Vgs 4.5V
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Rate Of Voltage Change Dv / Dt
Repetitive Avalanche Energy Max
LoadingGif
 
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We are delighted to provide the BSS84PH6327XTSA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84PH6327XTSA2 and other electronic components in the MOSFETs category and beyond.

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The BSS84PH6327XTSA2 is a Transistor, P-MOSFET, unipolar, -60V, -0.17A, 0.36W, SOT23 manufactured by Infineon. It is a low on-state resistance, fast switching, and low-threshold voltage N-channel enhancement mode field-effect transistor (FET). It is designed with an extended drain voltage range and a wide range of power stages. The device is also rated for a maximum junction temperature of 175°C for the SOT23 package, which provides greater reliability and stability in hostile operating environments. It can be used for load/switching applications due to its low on-state resistance and low threshold voltage characteristics that allow for lower power consumption. It is also ideally suited for applications such as DC-DC converters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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